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ES1G

Description
Reverse recovery time (trr): 35ns DC reverse withstand voltage (Vr): 400V Average rectified current (Io): 1A Forward voltage drop (Vf): 1.3V @ 1A
CategoryDiscrete semiconductor    Super fast recovery diode   
File Size551KB,3 Pages
ManufacturerFORMOSAMS
Websitehttp://www.formosagr.com/
FMS is a leading global manufacturer and supplier with the advantages of upstream and downstream semiconductor integration and proprietary core technologies. It is mainly engaged in the research and development and production of discrete devices such as TVS, Schottky diodes, fast recovery diodes, bridge diodes, and MOS power semiconductors. With its insight into market trends, FMS continues to launch thin packages that meet market demand. At the same time, in order to layout product market segments and the company's marketing strategy planning, MOS products launched the Anbon Semi brand, which is also owned by Shenzhen Meiliwei Semiconductor.
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ES1G Overview

Reverse recovery time (trr): 35ns DC reverse withstand voltage (Vr): 400V Average rectified current (Io): 1A Forward voltage drop (Vf): 1.3V @ 1A

ES1G Parametric

Parameter NameAttribute value
Reverse recovery time (trr)35ns
DC reverse withstand voltage (Vr)400V
Average rectified current (Io)1A
Forward voltage drop (Vf)1.3V @ 1A

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SURFACE MOUNT SUPER FAST RECTIFIER
ES1A THRU ES1J
1.0A Surface Mount Super
Fast Rectifiers-50-600V
Features
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Super fast switching for high efficiency
Low reverse leakage
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds at terminals
Glass passivated chip junction
Compliant to RoHS Directive 2011/65/EU
Formosa MS
Package outline
SMB/DO-214AA
0.086 (2.20)
0.071 (1.80)
0.155(3.94)
0.130(3.30)
0.183(4.65)
0.160(4.05)
0.012(0.305)
0.006(0.152)
0.096(2.45)
0.081(2.05)
Mechanical data
0.060(1.52)
Case:
JEDEC DO-214AA molded plastic body
Terminals:
Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.003
ounce, 0.093 grams
0.030(0.76)
0.008(0.203)MAX.
0.220(5.59)
0.205(5.21)
Dimensions in inches and (millimeters)
Maximum ratings and Electrical Characteristics
(AT
PARAMETER
Forward rectified current
Forward surge current
See Fig.2
CONDITIONS
T
A
=25
o
C unless otherwise noted)
Symbol
I
O
I
FSM
I
R
R
θJA
C
J
T
STG
-65
60
15
+150
MIN.
TYP.
MAX.
1.0
30
5.0
50
O
UNIT
A
A
8.3ms single half sine-wave (JEDEC methode)
V
R
= V
RRM
T
A
= 25
O
C
V
R
= V
RRM
T
A
= 100 C
Junction to ambient
NOTE 1
f=1MHz and applied 4V DC reverse voltage
O
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
*1
V
RRM
(V)
50
100
150
200
300
400
600
μA
C/W
pF
O
C
SYMBOLS
ES1A
ES1B
ES1C
ES1D
ES1E
ES1G
ES1J
V
RMS
*2
(V)
35
70
105
140
210
280
420
*3
V
R
(V)
50
100
150
200
300
400
600
*4
V
F
(V)
*5
t
rr
(ns)
Operating
temperature
T
J
, (
O
C)
*1 Repetitive peak reverse voltage
*2 RMS voltage
0.95
*3 Continuous reverse voltage
35
1.25
1.70
-55 to +150
*4 Maximum forward voltage@I
F
=1.0A
*5 Maximum Reverse recovery time, note 2
Note:
1.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
2. Reverse recovery time test condition, I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2010/03/10
Revision
E
Page.
3
Page 1
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