ES1B datasheet, PDF - EEWORLD Datasheet

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ES1B: DescriptionSuper Fast Recovery Rectifier Diode Super Fast Recovery Rectifier Diode; CategoryDiscrete semiconductor diode; File Size141KB，2 Pages; ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.; Websitehttp://www.21yangjie.com/; Environmental Compliance; Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.

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ES1B Overview

Super Fast Recovery Rectifier Diode Super Fast Recovery Rectifier Diode

Features

Product Name: Super Fast Recovery Rectifier Diode

Product model: ES1B

product features:

Io: 1.0A

VRRM: 50V-600V

High forward surge current capability

High surge forward current capability

Package: Molded plastic

Cases: Molded plastic

use:

Rectifier

product data:

Repetitive Peak Reverse Voltage VRRM Reverse repetitive peak voltage: 100V

Average Forward Current IF(AV) Average forward current: 1.0A

Surge(Non-repetitive)Forward Current IFSM Forward (non-repetitive) surge current: 30A

Junction Temperature TJ Junction temperature: -55 to +150 ℃

Storage Temperature TSTG storage temperature: -55 to +150 ℃

Peak Forward Voltage (IFM=1.0A) VFM Forward peak voltage: 0.95V

Peak Reverse Current (VRM=VRRM) IRRM1 (Ta=25℃) Reverse peak current: 5.0μA

IRRM2 (Ta=125℃) Reverse peak current: 100μA

Reverse Recovery time (IF=0.5A, IR=1A, IRR=0.25A) trr Reverse recovery time: 35ns

Thermal Resistance (Typical) RθJ-A Thermal resistance (typical) : 85 ℃/W; RθJ-L Thermal resistance (typical) : 35 ℃/W

Package: DO-214AC (SMA)

ES1B Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Yangzhou Yangjie Electronic Technology Co., Ltd.
package instruction	R-PDSO-C2
Reach Compliance Code	unknown
Is Samacsys	N
Other features	FREE WHEELING DIODE
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.95 V
JEDEC-95 code	DO-214AC
JESD-30 code	R-PDSO-C2
JESD-609 code	e3
Humidity sensitivity level	1
Maximum non-repetitive peak forward current	30 A
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	1 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Maximum repetitive peak reverse voltage	100 V
Maximum reverse recovery time	0.035 µs
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	C BEND
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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ES1A THRU ES1J

超快恢复整流二极管

■特征

Features

●

1.0A

●

RRM

50V-600V

●

耐正向浪涌电流½力高

High surge current capability

●

封装：模压塑料

Cases: Molded plastic

Super Fast Recovery Rectifier Diode

■外½尺寸和印记

Outline Dimensions and Mark

Mounting Pad Layout

0.065

(1.66)

0.080

(2.04)

0.077(1.96)

.012(0.31)

.006(0.15)

0.220

(5.58)

DO-214AC(SMA)

.062(1.58)

.049(1.25)

.187(4.75)

.167(4.25)

.091(2.30)

.075(1.90)

.056(1.41)

.030(0.76)

.111(2.83)

.094(2.40)

■用途

Applications

●整流用

Rectifier

.008(0.20)

.003(0.08)

.208(5.28)

.194(4.93)

Dimensions in inches and (millimeters)

■极限值（绝对最大额定值）

Limiting Values (Absolute Maximum Rating)

参数名称

Item

反向重复峰值电压

Repetitive Peak Reverse Voltage

正向平均电流

Average Forward Current

正向（不重复）浪涌电流

Surge(Non-repetitive)Forward

Current

结温

Junction Temperature

储存温度

Storage Temperature

符号

Symbol

RRM

F(AV)

单½

Unit

测试条件

Test Conditions

正弦半波

60Hz

，电阻负 ½½ ，

=120℃

60HZ Half-sine wave, Resistance

load, T

=120℃

正弦半波60Hz，

一个周期，

Ta=25℃

60Hz Half-sine wave ,1 cycle ,

Ta =25℃

ES1

100

150

400

200 300

500 600

1.0

FSM

STG

℃

-55~+150

-55 ~ +150

■电特性

（Ta=25℃ 除非另有规定）

Electrical Characteristics (Ta=25℃ Unless otherwise specified）

参数名称

Item

正向峰值电压

Peak Forward Voltage

最大反向恢复时间

Maximum reverse recovery

time

反向漏电流

Peak Reverse Current

热阻(典型)

Thermal

Resistance(Typical)

符号

Symbol

RRM1

RRM2

J-A

单½

Unit

μA

测试条件

Test Condition

=1.0A

=0.5A,I

=1.0A,I

=0.25A

RRM

Ta =25℃

Ta =100℃

ES1

0.95

100

1.3

1.7

℃

J-L

结和环境之间

Between junction and ambient

结和终端之间

Between junction and terminal

备注：Notes:

热阻从结到环境及从结到引线，在电路板的

0.2" x 0.2" (5.0毫米 x 5.0毫米)铜垫片区

Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper

pad areas

Document Number 0171

Rev. 1.0, 22-Sep-11

扬州扬杰电子科技股½有限公司

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

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