ER1603CT_10001 datasheet, PDF - EEWORLD Datasheet

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ER1603CT_10001: DescriptionRectifier Diode; CategoryDiscrete semiconductor diode; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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ER1603CT_10001 Overview

Rectifier Diode

ER1603CT_10001 Parametric

Parameter Name	Attribute value
Reach Compliance Code	compliant
Diode type	RECTIFIER DIODE
Base Number Matches	1

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ER1600CT~ER1606CT

ISOLATION SUPERFAST RECOVERY RECTIFIER

VOLTAGE

FEATURES

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-O.

Flame Retardant Epoxy Molding Compound.

• Exceeds environmental standards of MIL-S-19500/228

• Low power loss, high efficiency.

• Low forward voltage, high current capability

• High surge capacity.

• Super fast recovery times, high voltage.

• Epitaxial chip construction.

• Lead free in comply with EU RoHS 2011/65/EU directives

50 to 600 Volts

CURRENT

16 Amperes

MECHANICAL DATA

• Case: TO-220AB Molded plastic

• Terminals: Lead solderable per MIL-STD-750, Method 2026

• Polarity: As marked.

• Standard packaging: Any

• Weight: 0.0655 ounces, 1.859 grams.

MAXIMUM RATING AND ELECTRICAL CHARACTERISTICSS

Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

PA RA ME TE R

Ma xi mum Re c urre nt P e a k Re ve rs e Vo lta g e

Ma xi mum RMS Vo lta g e

Ma xi mum D C B lo c k i ng Vo lta g e

Ma xi mum A ve ra g e F o rwa rd C urre nt a t T

=9 0

P e a k F o rwa rd S urg e C urre nt, 8 .3 ms s i ng le ha lf s i ne -wa ve

s up e ri mp o s e d o n ra te d lo a d (J E D E C me tho d )

Ma xi mum F o rwa rd Vo lta g e a t 8 A

Ma xi mum D C Re ve rs e C urre nt a t Ra te d D C B lo c k i ng

Vo lta g e

Ma xi mum Re ve rs e Re c o ve ry Ti me (No te 2 )

Typ i c a l J unc ti o n C a p a c i ta nc e (No te 1 )

Typ i c a l The rma l Re s i s ta nc e

Op e ra ti ng a nd S to ra g e Te mp e ra ture Ra ng e

=2 5

=1 0 0

S YMB OL

RRM

RMS

F (AV )

FS M

0 .9 5

500

-5 0 to +1 5 0

E R1 6 0 0 C T E R1 6 0 1 C T E R1 6 0 1 A C T E R1 6 0 2 C T E R1 6 0 3 C T E R1 6 0 4 C T E R1 6 0 6 C T

UNITS

100

150

105

150

200

140

200

125

300

210

300

400

280

400

600

420

600

1 .3

1.7



J

S TG

C /

NOTES:

1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.

2. Reverse Recovery Test Conditions: I

=.5A, I

=1A, Irr=.25A.

3. Both Bonding and Chip structure are available.

January 17 2013-REV.07

PAGE . 1

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