DF005S datasheet, PDF - EEWORLD Datasheet

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DF005S: Description1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE; Categorysemiconductor Discrete semiconductor; File Size25KB，2 Pages; ManufacturerNanjing International Group Co.,Ltd

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1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE

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DF005S

THRU

DF10S

SINGLE PHASE 1.0AMPSURFACEMOUNT BRIDGE RECTIFIERS

VOLTAGE RANGE

50 t o 1000 Volts

CURRENT

1.0Ampere

FEATURES

*Idealforprintedcircuitboard

*Reliablelowcostconstructionutilizingmolded

plastictechnique

*Highsurgecurrentcapability

*Polarity:markedonbody

*Mountingposition:Any

*Weight:1.0grams

*Both normal and Pb free product are available:

*Normal:80~95%Sn,5~20%Pb

*Pb free:99 Sn above can meet Rohs enviroment substance

directive request

DF-1S

.335(8.3)

.307(7.8)

.255(6.5)

.245(6.2)

.031(0.8)

.024(0.6)

.047(1.2)

.037(0.95)

.323(8.2)

.315(8.0)

.014(.35)

.003(.08)

.406(10.3)

.394(10.0)

.060(1.5)

.040(1.0)

.102(2.6)

.089(2.2)

.205(5.2)

.195(5.0)

Dimensions ininchesand(millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating25Cambienttemperatureuniessotherwiesspecified.

Singlephasehalfwave,60Hz,resistiveorinductiveload.

Forcapacitiveload,deratecurrentby20%.

TYPE NUMBER

MaximumRecurrentPeakReverseVoltage

MaximumRMSVoltage

MaximumDCBlockingVoltage

MaximumAverageForwardRectifiedCurrent

.375"(9.5mm)LeadLengthatTa=40C

PeakForward SurgeCurrent,8.3mssinglehalfsine-wave

superimposedonratedload(JEDECmethod)

MaximumForwardVoltageDropperBridgeElementat1.0AD.C.

MaximumDCReverseCurrent

Ta=25 C

atRatedDCBlockingVoltage

OperatingTemperatureRange,Tj

StorageTemperatureRange,TSTG

Ta=125 C

DF005S

DF01S

D02S

DF04S

DF06S

DF08S

DF10S

UNITS

100

200

140

200

400

280

400

1.0

500

-65 +150

-65

+150

600

420

600

800

560

800

1000

700

1000

µA

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