DB106G datasheet, PDF - EEWORLD Datasheet

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DB106G: DescriptionBridge Rectifier Diode, 1A, 800V V(RRM); CategoryDiscrete semiconductor diode; File Size340KB，2 Pages; ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.; Websitehttp://www.21yangjie.com/; Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.

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DB106G Overview

Bridge Rectifier Diode, 1A, 800V V(RRM)

DB106G Parametric

Parameter Name	Attribute value
Maker	Yangzhou Yangjie Electronic Technology Co., Ltd.
Reach Compliance Code	unknown
Configuration	BRIDGE, 4 ELEMENTS
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
Maximum non-repetitive peak forward current	50 A
Number of components	4
Maximum operating temperature	150 °C
Maximum output current	1 A
Maximum repetitive peak reverse voltage	800 V
surface mount	NO
Base Number Matches	1

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DB101G/DB101SG

Single Phase 1.0 AMP

THRU DB107G/DB107SG

. Glass Passivated Bridge Rectifiers

Voltage Range

50 to 1000 V olts

Current

1.0 Ampere

Features

Ideal for printed circuit board

Reliable low cost construction utilizing

molded plastic technique

High temperature soldering guaranteed:

250

/ 10 seconds / 0.375

( 9.5mm )

lead length at 5 lbs., ( 2.3 kg ) tension

Small size, simple installation

Leads solderable per MIL-STD-202,

Method 208

High surge current capability

DBS

.255(6.5)

.245(6.2)

.315(8.0)

.285(7.24)

.130(3.30)

.120(3.05)

.047(1.20)

.040(1.02)

.205(5.2)

.195(5.0)

.335(8.51)

.320(8.12)

.08(2.03)

.05(1.27)

.404(10.3)

.386(9.80)

.335(8.51)

.320(8.13)

.350(8.9)

.300(7.6)

.045(1.14)

.035(0.89)

.022(0.56)

.018(0.46)

.205(5.2)

.195(5.0)

.080(2.03)

.050(1.27)

.075(1.90)

.055(1.39)

.013(0.33)

.0088(0.22)

.255(6.5)

.245(6.2)

.130(3.30)

.120(3.05)

.060(1.53)

.040(1.02)

.013(0.33)

.003(0.076)

Dimensions in inches

and (millimeters)

Maximum Ratings and Electrical Characteristics

Rating at 25

ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

Type Number

Maximum Recurrent Peak Reverse V

Maximum RMS V

oltage

Maximum DC Blocking V

oltage

DB101G

101SG

Maximum A verage Forward Rectified Current

= 40

•

Peak Forward Surge Current, 8.3 ms Single

Half Sine-wave Superimposed on Rated Load

(JEDEC method )

Maximum Instantaneous Forward V

oltage

@ 1.0A

Maximum DC Reverse Current @

=25

[€

at Rated DC Blocking V oltage @ T

=125℃

Operating T emperature Range T

Storage T emperature Range T

STG

DB102G

102SG

100

DB103G

103SG

200

140

200

DB104G

104SG

400

280

400

1.0

1.1

DB105G

105SG

600

420

600

DB106G

106SG

800

560

800

DB107G

107SG

Units

1000

700

1000

Note: DBS for Surface Mount Packa

500

-55 to +150

° C ª @

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