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DAN222M

Description
switching diode
CategoryDiscrete semiconductor   
File Size123KB,1 Pages
ManufacturerJCET
Websitehttp://www.cj-elec.com/

Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); ​​QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

 

 

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DAN222M Overview

switching diode

Features

Product Name: Switching Diode


Product model: DAN222M


product features:


Ultra Small Surface Mounting Type


Ultra High Speed Switching Applications


High Reliability



Product parameters:


Pd dissipated power: 150mW


Io rectified current: 100mA


VR reverse working voltage: 80V


VF forward buck: 1.2V


IR reverse current: 0.1uA


Trr Forward recovery time: 4ns



Package: SOT-723

DAN222M Preview

Download Datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-723 Plastic-Encapsulate Diodes
DAN222M
SOT-723
SWITCHING DIODE
FEATURES
Ultra Small Surface Mounting Type
Ultra High Speed Switching Applications
High Reliability
MARKING: N
MAXIMUM RATINGS ( T
a
=25
unless otherwise noted )
Symbol
V
RRM
V
RWM
V
R(RMS)
I
O
I
FM
I
FSM
P
D
R
θJA
T
j
T
stg
Parameter
Peak Reverse Voltage
Working Peak Reverse Voltage
RMS Reverse Voltage
Continuous Forward Current
Peak Forward Current
Non-Repetitive Peak Forward Surge Current (t=1µs)
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Value
80
80
56
100
300
4
150
833
150
-55~+150
Unit
V
V
V
mA
mA
A
mW
℃/W
ELECTRICAL CHARACTERISTICS(T
a
=25
unless otherwise specified)
Parameter
Reverse voltage
Reverse current
Forward voltage
Total capacitance
Reverse recovery time
Symbol
V
(BR)
I
R
V
F
C
tot
t
rr
I
R
=100uA
V
R
=70V
I
F
=100mA
V
R
=6V,f=1MHz
I
F
= I
R
=5mA, V
R
=6V,R
L
=50Ω
Test conditions
Min
80
0.1
1.2
3.5
4
Typ
Max
Unit
V
µA
V
pF
ns
A, Feb, 2012
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