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CMT20N15N220

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size123KB,4 Pages
ManufacturerChampion Microelectronic Corp.
Power control management IC chips are the primary key to improving the power saving performance of electronic facilities and products. Backed by the most advanced technology in Silicon Valley, U.S., Hongguan Electronics has invested in AC-DC analog power IC professional design for many years, and has always adhered to the concept of implementing energy conservation and carbon reduction, striving for a green world, so that energy saving and power saving performance can be fully realized in people's lives around the world.
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CMT20N15N220 Overview

Transistor

CMT20N15N220 Parametric

Parameter NameAttribute value
MakerChampion Microelectronic Corp.
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknown
Avalanche Energy Efficiency Rating (Eas)276 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage150 V
Maximum drain current (Abs) (ID)20 A
Maximum drain current (ID)20 A
Maximum drain-source on-resistance0.13 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)174 pF
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)112 W
Maximum pulsed drain current (IDM)60 A
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)164 ns
Maximum opening time (tons)178 ns

CMT20N15N220 Preview

Download Datasheet
CMT20N15
P
OWER
MOSFET
GENERAL DESCRIPTION
This Power MOSFET is designed to withstand high energy
in avalanche and commutation modes. The new energy
efficient design also offers a drain-to-source diode with a
fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and
PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage
transients.
!
!
FEATURES
!
!
!
Robust High Voltage Termination
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I
DSS
and V
DS
(on) Specified at Elevated Temperature
PIN CONFIGURATION
TO-220
SYMBOL
D
Front View
G ATE
SO URCE
DRAIN
G
S
1
2
3
N-Channel MOSFET
ORDERING INFORMATION
Part Number
CMT20N15N220
Package
TO-220
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current
Continuous
Pulsed
Gate-to-Source Voltage
Continue
Non-repetitive
Total Power Dissipation
Derate above 25℃
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy
T
J
= 25℃
(V
DD
= 50V, V
GS
= 10V, I
L
= 20A, L = 1.38mH, R
G
= 25Ω)
Thermal Resistance
Junction to Case
Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
θ
JC
θ
JA
T
L
1.1
62.5
260
℃/W
T
J
, T
STG
E
AS
Symbol
I
D
I
DM
V
GS
V
GSM
P
D
Value
20
60
±20
±32
112
0.9
-55 to 150
276
V
V
W
W/℃
mJ
Unit
A
2003/03/31
Preliminary
Rev. 1.0
Champion Microelectronic Corporation
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