CMT02N60XN252 datasheet, PDF - EEWORLD Datasheet

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CMT02N60XN252: DescriptionPOWER FIELD EFFECT TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size232KB，7 Pages; ManufacturerChampion Microelectronic Corp.; Power control management IC chips are the primary key to improving the power saving performance of electronic facilities and products. Backed by the most advanced technology in Silicon Valley, U.S., Hongguan Electronics has invested in AC-DC analog power IC professional design for many years, and has always adhered to the concept of implementing energy conservation and carbon reduction, striving for a green world, so that energy saving and power saving performance can be fully realized in people's lives around the world.

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CMT02N60XN252 Overview

POWER FIELD EFFECT TRANSISTOR

CMT02N60XN252 Parametric

Parameter Name	Attribute value
Maker	Champion Microelectronic Corp.
package instruction	,
Reach Compliance Code	unknow

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CMT02N60

OWER

IELD

FFECT

RANSISTOR

GENERAL DESCRIPTION

This high voltage MOSFET uses an advanced termination

scheme to provide enhanced voltage-blocking capability

without degrading performance over time. In addition, this

advanced MOSFET is designed to withstand high energy in

avalanche and commutation modes. The new energy

efficient design also offers a drain-to-source diode with a

fast recovery time. Designed for high voltage, high speed

switching applications in power supplies, converters and

PWM motor controls, these devices are particularly well

suited

for

bridge

circuits

where

diode

speed

and

commutating safe operating areas are critical and offer

additional and safety margin against unexpected voltage

transients.

FEATURES

Robust High Voltage Termination

Avalanche Energy Specified

Source-to-Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

Diode is Characterized for Use in Bridge Circuits

DSS

and V

(on) Specified at Elevated Temperature

PIN CONFIGURATION

TO-220/TO-220FP

TO-251

TO-252

SYMBOL

N-Channel MOSFET

Front View

SOURCE

DRAIN

GATE

DRAIN

GATE

ABSOLUTE MAXIMUM RATINGS

Rating

Drain to Current

－

Continuous

－

Pulsed

Gate-to-Source Voltage

－

Continue

－

Non-repetitive

Total Power Dissipation

TO-251

TO-220

TO-220FP

Operating and Storage Temperature Range

Single Pulse Drain-to-Source Avalanche Energy

－

= 25℃

= 100V, V

= 10V, I

= 2A, L = 10mH, R

= 25Ω)

Thermal Resistance

－

Junction to Case

－

Junction to Ambient

Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds

1.0

62.5

260

℃

℃/W

, T

STG

Symbol

GSM

D(Max)

-55 to 150

℃

Value

2.0

4.0

±20

±40

Unit

2010/12/21

Rev. 1.5

Champion Microelectronic Corporation

Page 1

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