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CJU80N03

Description
Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 80A Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 6.5mΩ @ 30A, 10V Maximum power dissipation (Ta =25°C): 1.25W Type: N-channel N-channel, 30V/80A, 6.5 milliohms.
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size804KB,5 Pages
ManufacturerJCET
Websitehttp://www.cj-elec.com/

Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); ​​QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

 

 

Download Datasheet Parametric View All

CJU80N03 Overview

Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 80A Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 6.5mΩ @ 30A, 10V Maximum power dissipation (Ta =25°C): 1.25W Type: N-channel N-channel, 30V/80A, 6.5 milliohms.

CJU80N03 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)30V
Continuous drain current (Id) at 25°C80A
Gate-source threshold voltage3V @ 250uA
Drain-source on-resistance6.5mΩ @ 30A,10V
Maximum power dissipation (Ta=25°C)1.25W
typeN channel

CJU80N03 Preview

Download Datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate MOSFETS
CJU80N03
V
(BR)DSS
30V
DESCRIPTION
The CJU80N03 uses advanced trench technology and design
to provide excellent R
DS(ON)
with low gate charge. It can be used in a
wide variety of applications.
FEATURES
High density cell design for ultra low
R
DS(ON)
Fully characterized Avalanche voltage and current
Good stability and uniformity with high E
AS
Excellent package for good heat dissipation
Special process technology for high ESD capability
N-Channel Power MOSFET
R
DS(on)
MAX
6.5m
Ω@10V
10mΩ@
5V
 
 
I
D
80A
TO-252-2L
1. GATE
2. DRAIN
3. SOURCE
APPLICATIONS
Power switching application
Hard switched and high frequency circuits
Uninterruptible Power Supply
MARKING
CJU80N03=
Device code
Solid
dot = Green molding compound device,
if none, the normal device
XXX
=Date Code
EQUIVALENT CIRCUIT
MAXIMUM RATINGS ( T
a
=25℃ unless otherwise noted )
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Lead Temperature for Soldering Purposes(1/8’’ from case for 10s)
(1).E
AS
condition: V
DD
=20V,L=0.5mH, R
G
=25Ω, Starting T
J
= 25°C
Symbol
V
DS
V
GS
I
D
I
DM
E
AS(1)
P
D
R
θJA
T
J
T
stg
T
L
Limit
30
±20
80
320
306
1.25
100
150
-55 ~+150
260
Unit
V
V
A
A
mJ
W
℃/W
www.cj-elec.com
1
A,Mar,2016
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