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CESD5V0L4

Description
ESD protection diode
CategoryDiscrete semiconductor   
File Size2MB,1 Pages
ManufacturerJCET
Websitehttp://www.cj-elec.com/

Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); ​​QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

 

 

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CESD5V0L4 Overview

ESD protection diode

Features

Product Name: ESD Protection Diode


Product model: CESD5V0L4


Product Description:


The CESD5V0L4 is designed to protect voltage sensitive


components from ESD. Excellent clamping capability, low leakage,


and fast response time provide best in class protection on designs that


are exposed to ESD. Because of its small size, it is suited for use in


cellular phones, MP3 players, digital cameras and many other portable


applications where board space is at a premium.



Product Features:


Low Leakage


Response Time is Typically < 1 ns


ESD Rating of Class 3 (> 16 kV) Per Human Body Model


IEC61000?4?2 Level 4 ESD Protection


These are Pb?Free Devices



Product parameters:


Pd dissipated power: 150mW


Vrwm reverse working peak voltage: 5V


V(BR) Breakdown voltage: Min=6V Max=7.2V


IR maximum reverse leakage current: 5uA


IT test current: 1mA


VC clamping voltage: 13.5V


IPP reverse pulse current peak: 5A


C Capacitance: 32+pF



Package: SOT-553

CESD5V0L4 Preview

Download Datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-553 Plastic-Encapsulate Diodes
CESD5V0L4
ESD Protection Diode
SOT-553
DESCRIPTION
The CESD5V0L4 is designed to protect voltage sensitive
components from ESD. Excellent clamping capability, low leakage,
and fast response time provide best in class protection on designs that
are exposed to ESD. Because of its small size, it is suited for use in
cellular phones, MP3 players, digital cameras and many other portable
applications where board space is at a premium.
5
4
1
2
3
FEATURES
Low Leakage
Response Time is Typically < 1 ns
ESD Rating of Class 3 (> 16 kV)
Per
Human Body Model
IEC61000−4−2 Level 4 ESD Protection
These are Pb−Free Devices
Maximum Ratings @Ta=25℃
Parameter
Symbol
Limit
±15
±15
16
400
Unit
KV
KV
V
W
mW
℃/W
IEC61000−4−2(ESD)
ESD voltage
Air
Contact
Per Human Body Model
Per Machine Model
P
pk
P
D
R
ΘJA
T
L
T
j,
T
stg
Peak Power Dissipation @ 8 X 20 ms @TA
25°C (Note 1)
Steady State Power -- 1 Diode (Note 2)
Thermal Resistance Junction−to−Ambient
Lead Solder Temperature
Maximum (10 Second Duration)
Junction and Storage
Temperature Range
100
150
833
260
-55 ~ +150
Stresses exceeding
maximum ratings
may damage the device. Maximum
ratings
are stress ratings only.
Functional operation above the
recommended.
Operating
conditions
is not implied. Extended exposure to
stresses above the
recommended operating conditions
may affect device reliability.
ELECTRICAL CHARACTERISTICS
(T
a
= 25°C unless otherwise noted,
V
F
= 0.9 V Max. @ I
F
= 10mA for all types)
V
C
(V)
I
R
(μA)
Device
Device
Marking
Max
CESD5V0L4
Max
Min
Max
mA
Max
V
RWM
(V)
@ V
RWM
@ I
T
V
BR
(V)
I
T
@I
F
=200mA
I
PP
=1A
Max
I
PP
=5A
Max
Typ
V
F
(V)
@Max
@Max
C (pF)
V
C
(V)
42
5.0
5
6.0
7.2
1.0
1.25
10.5
13.5
32
1. Non--repetitive current per Figure 1. Derate per Figure 2.
2. Only 1 diode under power. For all 4 diodes under power, P
D
will be 25%. Mounted on FR--4 board with min pad.
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