CESD1006LC5VB-M
CREATEK Microelectronics
ESD Protection Diode in DFN1006
Features
■
40Watts
peak pulse power (tp = 8/20μs)
■
DFN1006 package
■
Bidirectional configurations
■
Low clamping voltage
■
Low leakage current
■
Normal capacitance (Cj=3pF typ.)
■
Protection one data/power line to:
1
2
IEC 61000-4-2 ±
8kV
contact ±15kV air
IEC 61000-4-4 (EFT) 40A (5/50ns)
IEC 61000-4-5 (Lightning)
3.5A
(8/20μs)
Mechanical Data
■
Applications
■
Cell Phone Handsets and Accessories
■
Microprocessor based equipment
■
Personal Digital Assistants (PDA’s)
■
Notebooks, Desktops, and Servers
■
Portable Instrumentation
Case:
DFN1006 (plastic package).
Lead free; RoHS compliant
Molding Compound Flammability Rating:
UL 94 V-0
Terminals:
High temperature soldering guaranteed:
260 °C/10 sec. at terminals
■
■
Absolute Maximum Ratings
Ratings at 25 °C, ambient temperature unless otherwise specified
Parameter
Peak Pulse Power (T
P
=8/20μS)
ESD contact/air discharge (IEC-61000-4-2)
Peak Pulse Current ( t
P
= 8/20μS )
Junction Temperature
Storage temperature
Symbol
P
PP
V
ESD
I
PP
T
J
T
STG
Value
40
8/15
3.5
-55 to +125
-55 to +125
Unit
W
kV
A
℃
℃
Electrical Characteristics
(T
A
= 25 °C unless otherwise specified)
Parameter
Reverse stand-off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage (IEC 61000-4-2)
Clamping Voltage (IEC 61000-4-5)
Junction Capacitance
Symbol
V
RWM
V
BR
I
R
V
C
V
C
C
J
Condition
I
T
=1mA
V
RWM
=5V
V
ESD
=8KV
I
PP
=3.5A
V
R
=0V, f=1MHz
Min
5.5
Typ
Max
5
500
Unit
V
V
nA
V
V
pF
10
12
2.5
Rev. 1.0
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1
CESD1006LC5VB-M
CREATEK Microelectronics
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Specifications are subject to change without notice
t
© Copyright 2009,CREATEK Microelectronics
® is a registered trademark of CREATEK Microelectronics
All rights reserved
Rev. 1.0
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