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CESD1006LC5VB-M

Description
Polarity: Bidirectional Peak pulse current (10/1000us): 3.5A (8/20us) Clamping voltage: 12V Breakdown voltage (minimum): 5.5V Reverse shutdown voltage (typ.): 5V (Max)
CategoryDiscrete semiconductor    ESD diode   
File Size559KB,4 Pages
ManufacturerCREATEK Microelectronics Co.,Ltd
Websitehttp://www.crea-tek.com/
CREATEK Microelectronics was founded in the United States and entered China in 2009 and reorganized with Chinese companies. It is mainly engaged in the design, manufacture and sales of IGBT, MOSFET, FRD, protection devices, planar magnets, and provides related application solutions. The headquarters is located in China, with a research and development center in San Francisco, a North American sales center, and sales offices in Shenzhen, Shanghai, Suzhou, Taiwan, China, and Singapore.
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CESD1006LC5VB-M Overview

Polarity: Bidirectional Peak pulse current (10/1000us): 3.5A (8/20us) Clamping voltage: 12V Breakdown voltage (minimum): 5.5V Reverse shutdown voltage (typ.): 5V (Max)

CESD1006LC5VB-M Parametric

Parameter NameAttribute value
polarityBidirectional
Peak pulse current (10/1000us)3.5A (8/20us)
clamping voltage12V
Breakdown voltage (minimum value)5.5V
Reverse shutdown voltage (typ)5V (Max)

CESD1006LC5VB-M Preview

Download Datasheet
CESD1006LC5VB-M
CREATEK Microelectronics
ESD Protection Diode in DFN1006
Features
40Watts
peak pulse power (tp = 8/20μs)
DFN1006 package
Bidirectional configurations
Low clamping voltage
Low leakage current
Normal capacitance (Cj=3pF typ.)
Protection one data/power line to:
1
2
IEC 61000-4-2 ±
8kV
contact ±15kV air
IEC 61000-4-4 (EFT) 40A (5/50ns)
IEC 61000-4-5 (Lightning)
3.5A
(8/20μs)
Mechanical Data
Applications
Cell Phone Handsets and Accessories
Microprocessor based equipment
Personal Digital Assistants (PDA’s)
Notebooks, Desktops, and Servers
Portable Instrumentation
Case:
DFN1006 (plastic package).
Lead free; RoHS compliant
Molding Compound Flammability Rating:
UL 94 V-0
Terminals:
High temperature soldering guaranteed:
260 °C/10 sec. at terminals
Absolute Maximum Ratings
Ratings at 25 °C, ambient temperature unless otherwise specified
Parameter
Peak Pulse Power (T
P
=8/20μS)
ESD contact/air discharge (IEC-61000-4-2)
Peak Pulse Current ( t
P
= 8/20μS )
Junction Temperature
Storage temperature
Symbol
P
PP
V
ESD
I
PP
T
J
T
STG
Value
40
8/15
3.5
-55 to +125
-55 to +125
Unit
W
kV
A
Electrical Characteristics
(T
A
= 25 °C unless otherwise specified)
Parameter
Reverse stand-off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage (IEC 61000-4-2)
Clamping Voltage (IEC 61000-4-5)
Junction Capacitance
Symbol
V
RWM
V
BR
I
R
V
C
V
C
C
J
Condition
I
T
=1mA
V
RWM
=5V
V
ESD
=8KV
I
PP
=3.5A
V
R
=0V, f=1MHz
Min
5.5
Typ
Max
5
500
Unit
V
V
nA
V
V
pF
10
12
2.5
Rev. 1.0
www.crea-tek.com
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