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CBD20120VDC_T0_00001

Description
Ultra low forward voltage drop, low power loss
File Size62KB,4 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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CBD20120VDC_T0_00001 Overview

Ultra low forward voltage drop, low power loss

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CBD20120VDC
ULTRA LOW VF SCHOTTKY RECTIFIER
VOLTAGE
FEATURES
• Ultra low forward voltage drop, low power loss
• High efficiency operation
• Lead free in compliance with EU RoHS 2011/65/EU directive
0.110(2.8)
0.236(6.0)
0.197(5.0)
0.026(0.7)
0.011(0.3)
0.055(1.4)
0.039(1.0)
0.108(2.75)
0.092(2.35)
0.035(0.9)MAX.
0.357(9.1)
0.335(8.5)
120 Volt
CURRENT
20 Ampere
0.189(4.8)
0.137(4.4)
0.055(1.4)
0.047(1.2)
0.418(10.6)
0.378(9.60)
0.409(10.4)
0.387(9.80)
MECHANICAL DATA
Case : TO-263/D
2
PAK, Plastic
Terminals : Solderable per MIL-STD-750, Method 2026
Weight : 0.0514 ounces, 1.46 grams.
0.108(2.75)
0.092(2.35)
MAXIMUM RATINGS(T
A
=25
o
C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum rms voltage
Maximum dc blocking voltage
Maximum average forward rectified current
Peak forward surge current : 8.3ms single half
sine-wave superimposed on rated load
Typical thermal resistance
Operating junction temperature range
Storage temperature range
per device
per diode
per diode
( No te 1 )
SYMBOL
V
RRM
V
RMS
V
R
I
F(AV)
I
FSM
R
JC
T
J
T
STG
VALUE
120
84
120
20
10
200
3.5
-55 to + 150
-55 to + 150
O
UNIT
V
V
V
A
A
C /W
o
C
C
o
NOTE: 1.Semi-infinite heatsink.
ELECTRICAL CHARACTERISTICS(T
A
=25
o
C unless otherwise noted)
PARAMETER
Breakdown voltage per diode
SYMBOL
V
BR
TEST CONDITIONS
I
R
=0.5mA
I
F
=3A
I
F
=5A
I
F
=10A
I
F
=3A
I
F
=5A
V
R
=96V
Reverse current per diode
I
R
V
R
=120V
T
J
=25
o
C
T
J
=125
o
C
T
J
=25
o
C
T
J
=25
o
C
T
J
=125
o
C
MIN.
120
-
-
-
-
-
-
-
-
TYP.
-
0.54
0.63
-
0.46
0.53
5.5
-
15
MAX.
-
-
-
0.78
-
-
-
50
-
UNIT
V
V
V
A
A
mA
Instantaneous forward voltage per
diode
V
F
November 11,2013-REV.00
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