C1815GR datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> C1815GR

C1815GR: DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size110KB，2 Pages; ManufacturerJCET; Websitehttp://www.cj-elec.com/; Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

Download Datasheet Parametric View All

C1815GR Overview

Transistor

C1815GR Parametric

Parameter Name	Attribute value
Maker	JCET
Reach Compliance Code	unknown
Maximum collector current (IC)	0.15 A
Configuration	Single
Minimum DC current gain (hFE)	200
Maximum operating temperature	150 °C
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.4 W
surface mount	NO
Nominal transition frequency (fT)	80 MHz

C1815GR Preview

Download Datasheet

View All

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD

TO-92 Plastic-Encapsulate Transistors

C1815

FEATURES

Power dissipation

MAXIMUM RATINGS* T

=25℃ unless otherwise noted

Symbol

CBO

CEO

EBO

, T

stg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Total Device Dissipation

Junction and Storage Temperature

Value

150

400

-55-150

Units

℃

3.BASE

TRANSISTOR (NPN)

TO—92

1.EMITTER

2.COLLECTOR

1 2 3

*These ratings are limiting values above which the serviceability

of any semiconductor device may be impaired.

ELECTRICAL CHARACTERISTICS（Tamb=25℃

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Collector Output Capacitance

Noise Figure

Symbol

V(BR)

CBO

V(BR)

CEO

V(BR)

EBO

CBO

CEO

EBO

FE(1)

(sat)

Cob

unless

Test

otherwise

specified）

TYP

MAX

UNIT

0.1

conditions

MIN

Ic= 100 uA, I

Ic= 0. 1 mA, I

= 100 uA, I

= 60

= 50

V, I

= 2mA

6 V,

700

0.25

MHz

3.5

= 100mA, I

= 10 mA

= 100 mA, I

= 10mA

= 10 V, I

= 1mA

f=30MHz

VCB=10V,IE=0

f=1MHZ

= 6 V, I

=0.1 mA

f =1KHz,RG=10K

CLASSIFICATION OF

Rank

Range

FE(1)

70-140

120-240

200-400

350-700

Recommended Resources

Protective ground circuit

Use LED digital clock to make timing switch circuit 2

Voltage Mode Circuit Diagram

80m band azimuth conversion circuit

Multi-light sensor Brinell hardness detection circuit

Safe automatic nickel-cadmium battery charger circuit

Bose small speaker disassembly: [i=s]This post was last edited by tianshuihu on 2020-1-9 23:49[/i]It was already in 2019, but I just sorted it out today...Last May, I noticed that the battery of my Bluetooth speaker was getting lowe...; tianshuihu Making friends through disassembly

Guangdong Tonly Semiconductor suffered a confined space suffocation accident: 4 workers from the outsourcing unit died: According to a report from the Guangdong Provincial Emergency Management Department, at around 4 p.m. on May 1, a confined space suffocation accident occurred during the cleaning of the RO water tank ...; eric_wang Talking about work

LIS3MDL evaluation board STEVAL-MKI137V1 data: STEVAL-MKI137V1 manual:STEVAL-MKI137V1 schematic diagram:STEVAL-MKI137V1 Bill of Materials:STEVAL-MKI137V1 GERBER files:LIS3MDL information post: https://en.eeworld.com/bbs/thread-1070028-1-1.html...; littleshrimp MEMS sensors

TI Embedded Live Month: In-depth exploration of new applications of embedded products in industry and automobiles. The first live broadcast today at 10:00: TI Embedded Live Month: In-depth exploration of new applications of embedded products in industry and automobiles. The first live broadcast today at 10:00Click here to enter the live broadcastLive bro...; EEWORLD社区 TI Technology Forum

Knowing the total resistance of the resistors, how big should two resistors be connected in parallel?: Good morning everyone!For example, if the resistance value is 2.35R, how can we get 2.35R by connecting two resistors in parallel? Is there any trick or formula to quickly calculate the required resis...; wzk198005 Analog electronics

The switching power supply needs to provide a 25A instantaneous high current and has overcurrent protection. How much overcurrent protection should be set?: The switching power supply needs to provide a 25A instantaneous high current and has overcurrent protection. How much overcurrent protection should be set?...; licc123 Switching Power Supply Study Group

Popular Components