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BZX584B4V3

Description
Zener diode
CategoryDiscrete semiconductor    diode   
File Size617KB,2 Pages
ManufacturerJCET
Websitehttp://www.cj-elec.com/

Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); ​​QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

 

 

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BZX584B4V3 Overview

Zener diode

Features

Product Name: Zener Diode


Product model: BZX584B4V3


product features:


Planar Die Construction


150mW Power Dissipation


Zener Voltages from 2.4 – 39V




Product parameters:


Pd dissipated power: 150mW


Vz stable voltage: Nom=4.3V Min=4.21V Max=4.39V


Zzt breakdown impedance: 90Ω


Zzk breakdown impedance: 600Ω


IR reverse current: 3uA


Vf forward voltage drop: 0.9V



Package: SOD-523

BZX584B4V3 Parametric

Parameter NameAttribute value
MakerJCET
Reach Compliance Codeunknown
ECCN codeEAR99
Base Number Matches1

BZX584B4V3 Preview

Download Datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-523 Plastic-Encapsulate Diode
BZX584B2V4-BZX584B39
ZENER DIODE
FEATURES
Planar Die Construction
150mW Power Dissipation
Zener Voltages from 2.4 – 39V
SOD-523
Maximum Ratings(T
a
=25℃ unless otherwise specified
)
Characteristic
Forward Voltage
@I
F
=10mA
Symbol
V
F
P
D
R
θ
JA
T
j
,T
STG
Value
0.9
150
Unit
V
mW
℃/W
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient Air
Operating and Storage Temperature Range
833
-65
~
+150
A,Jun,2011
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