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BZX55B4V3

Description
Zener diode
CategoryDiscrete semiconductor    diode   
File Size187KB,5 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Environmental Compliance
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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BZX55B4V3 Overview

Zener diode

Features

Product Name: Zener diode


Product model: BZX55B4V3


product features:


Ptot 500mW


Vz 2.4V-75V



Product Usage:


Stabilizing Voltage



product data:


Zener voltage range Vz at Izt Rated Zener voltage: Min=4.22V Max=4.38V


Dynamic resistance:


Rzjt at Izt f = 1KHz < 90Ω


Rzjk at Izk f=1KHz < 600Ω


Test current Izt Test current: 5mA


Temperature Coefficient: Min=-0.06%/K Max=-0.03%/K


Reverse leakage current Reverse leakage current:


IR at Tamb = 25℃ <1μA


IR at Tamb = 150℃ <20μA


at VR=1V


Maximum junction temperature Tj: 175℃


Storage temperature range Tstg: -65~+175℃



Package: DO-35


BZX55B4V3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerYangzhou Yangjie Electronic Technology Co., Ltd.
Reach Compliance Codeunknow
ConfigurationSINGLE
Diode typeZENER DIODE
Maximum dynamic impedance90 Ω
Number of components1
Maximum operating temperature175 °C
Maximum power dissipation0.5 W
Nominal reference voltage4.3 V
surface mountNO
Maximum voltage tolerance2%
Working test current5 mA

BZX55B4V3 Preview

Download Datasheet
BZX55 SERIES
稳压(½纳)二极管
■特征
Features
P
tot
500mW
V
z
2.4V-75V
Zener Diodes
Outline Dimensions and Mark
■外½尺寸和印记
DO-35
1.02(26.0)
MIN
.165(4.20)
MAX
1.02(26.0)
MIN
.022(0.55)
MAX
■用途  Applications
 
●稳定电压用  Stabilizing
Voltage
.079(2.00)
MAX
■极限值(绝对最大额定值)
 
Limiting Values (Absolute Maximum Rating)
参数名称
Item
损耗功率
Power dissipation
½纳电流
Zener current
最大结温
Maximum junction temperature
存储温度范围
Storage temperature range
Dimensions in inches and (millimeters)
符号
Symbol
P
tot
I
Z
T
j
单½
Unit
mW
mA
条件
Conditions
L=4mm,T
L
=25℃
P
tot
/V
Z
最大值
Max
500
见表格
See Table
175
T
stg
-65 to +175
■电特性 (T
a=25
除非另有规定)
Electrical Characteristics(Ta=25
Unless otherwise specified)
参数名称
Item
典型热阻(1)
Thermal resistance
正向电压
Forward voltage
符号
Symbol
R
θJA
V
F
单½
Unit
℃/W
V
条件
Conditions
结到环境,L=4毫米,T
L
=常温
junction to ambient air, L=4mm,T
L
=constant
I
F
=200mA
最大值
Max
300
1.5
Document Number 0242
Rev. 1.0, 22-Sep-11
扬州扬杰电子科技½股½有限公司
Yangzhou Yangjie Electronic Technology Co., Ltd. 
www.21yangjie.com
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