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BZT52C6V8

Description
Accuracy: ±5% Voltage regulation value (typical value): 6.8V Reverse leakage current: 500nA @ 3.5V Maximum power: 500mW 6.8V 0.5W
CategoryDiscrete semiconductor    Zener diode   
File Size2MB,4 Pages
ManufacturerSHIKUES
Websitehttp://www.shike.tw
Shike, originated from Taiwan, China, is one of the world's leading semiconductor discrete component manufacturers. It mainly provides engineers and designers with various semiconductor products and software, bringing better sensory experience to products such as automobiles, communications, computers, consumer electronics, industry, LED lighting, medical and power applications. Since its establishment, under the guidance of the core concept of "making products have good cores", with safety, low energy consumption and high performance as its purpose, Shike Semiconductor's R&D strategy has never wavered. Nearly a quarter of its employees work in the field of R&D and product design, and annual R&D expenses account for about 22% of total revenue. In addition, with the hard work of young, dream-filled and passionate employees, Shike has developed rapidly, and its products are exported to North America, Europe and the Asia-Pacific region. It is considered one of the most innovative companies in the semiconductor industry. Shike will continue to optimize in terms of safety, energy consumption and performance, and more flexibly meet the needs of design engineers and the ever-changing market. From concept design to production and manufacturing, we will provide full support. Looking to the future, we will focus on innovation and continue to create value for our customers, employees and society as a whole. By reducing energy consumption, improving safety and enhancing performance, we will focus on how to use technological research and development to improve the quality of life of the public. We will go all out to fulfill our commitments.
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BZT52C6V8 Overview

Accuracy: ±5% Voltage regulation value (typical value): 6.8V Reverse leakage current: 500nA @ 3.5V Maximum power: 500mW 6.8V 0.5W

BZT52C6V8 Parametric

Parameter NameAttribute value
Accuracy±5%
Stable voltage value (typical value)6.8V
Reverse leakage current500nA @ 3.5V
Maximum power500mW

BZT52C6V8 Preview

Download Datasheet
BZT52C2V0 THRU BZT52C75
Silicon Planar Zener Diodes
PINNING
Features
• Total power dissipation: max. 500 mW
• Small plastic package suitable for surface mounted design
• Tolerance approximately ± 5%
PIN
1
2
1
DESCRIPTION
Cathode
Anode
2
Top View
Simplified outline SOD-123 and symbol
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
P
tot
T
J
T
Stg
Value
500
150
- 55 to + 150
Unit
mW
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
Thermal Resistance Junction to Ambient Air
Forward Voltage
at I
F
= 10 mA
Symbol
R
thA
V
F
Max.
340
0.9
Unit
O
C/W
V
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