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BZT52C10

Description
Accuracy: - Regulated voltage value (typical value): 10V Reverse leakage current: 200nA @ 7V Maximum power: 500mW 10V, 500mW
CategoryDiscrete semiconductor    Zener diode   
File Size463KB,5 Pages
ManufacturerMicrodiode Semiconductor (Shenzhen) Co., Ltd.
Websitehttp://www.microdiode.com/
Shenzhen Chenda Semiconductor Co., Ltd. (MDD for short) is a national high-tech enterprise focusing on the R&D, design, packaging, testing and sales of semiconductor discrete devices. The company has been deeply involved in the semiconductor field for 16 years, always insisting on product technology as the driving force and customer needs as the core, creating a full range of high-reliability and high-performance product service matrix covering MOSFET, diodes, triodes, rectifier bridges, SiC, etc. The products are widely used in new energy vehicles, industrial control, consumer electronics, communications, home appliances, medical, lighting, security, instrumentation and other fields, serving more than 40 countries and regions around the world. The company adheres to the development concept of keeping pace with the times, based on the current advanced power device design and packaging and testing capabilities, continues to pay attention to the development trends of cutting-edge technologies and application fields, comprehensively promotes product upgrades and iterations, improves the industrialization of power devices and the ability of service closed loop, and provides customers with sustainable, all-round and differentiated one-stop product solutions. Looking to the future, the company will rely on its ability to insight the industry, through the dual-wheel drive of brand and technology, to quickly realize the development vision of "building an international leading brand of semiconductor discrete devices" and help upgrade China's semiconductor industry.
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BZT52C10 Overview

Accuracy: - Regulated voltage value (typical value): 10V Reverse leakage current: 200nA @ 7V Maximum power: 500mW 10V, 500mW

BZT52C10 Parametric

Parameter NameAttribute value
Accuracy-
Stable voltage value (typical value)10V
Reverse leakage current200nA @ 7V
Maximum power500mW

BZT52C10 Preview

Download Datasheet
BZT52C2V0-BZT52C75
S½½½½½½ ½½½½½ ½½½½½ ½½½½½
FEATURES
Planar die construction.
500mW power dissipation on ceramic
PCB.
General purpose, medium current.
Pb
Lead-free
Ideally suited for automated assembly processes.
APPLICATIONS
Zener diode.
Ultra-small surface mount package.
SOD-123
ORDERING INFORMATION
Type No.
BZT52C2V0-BZT52C75
Marking
See table 2
Package Code
SOD-123
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Characteristic
Forward Voltage
Power Dissipation
Thermal resistance,junction to ambient air
Junction temperature
Storage temperature range
@ I
F
=10mA
Symbol
V
F
P
d
R
θjA
T
j
T
stg
Value
0.9
500
305
150
-65 to +150
Unit
V
mW
℃/W
Notes: 1. Device mounted on ceramic PCB; 7.6mm x 9.4mm x 0.87mm with pad areas 25mm
2
2. Short duration test pulse used to minimize self-heating effect.
3. When provided, otherwise, parts are provided with date code only, and type number
identifications appears on reel only.
4. f = 1KHz
2014-03 01版
½½½½://½½½.½½½½½½½½½½.½½½
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