BZT52-B5V6S_R1_00001 datasheet, PDF

BZT52-B5V6S_R1_00001: DescriptionAccuracy: - Regulated voltage value (typ.): 5.6V Reverse leakage current: 100nA @ 1V Maximum power: 200mW 5.6V 200mW; CategoryDiscrete semiconductor diode; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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Accuracy: - Regulated voltage value (typ.): 5.6V Reverse leakage current: 100nA @ 1V Maximum power: 200mW 5.6V 200mW

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	R-PDSO-F2
Reach Compliance Code	compliant
ECCN code	EAR99
Configuration	SINGLE
Diode component materials	SILICON
Diode type	ZENER DIODE
Maximum dynamic impedance	40 Ω
JESD-30 code	R-PDSO-F2
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	UNIDIRECTIONAL
Maximum power dissipation	0.2 W
Nominal reference voltage	5.6 V
surface mount	YES
technology	ZENER
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Maximum voltage tolerance	1.96%
Working test current	5 mA
Base Number Matches	1

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