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BZQ55-C2V4DT/R13

Description
Zener Diode, 2.4V V(Z), 20%, 0.5W, Silicon, Unidirectional, ROHS COMPLIANT, GLASS, QUADROMELF-2
CategoryDiscrete semiconductor    diode   
File Size103KB,4 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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BZQ55-C2V4DT/R13 Overview

Zener Diode, 2.4V V(Z), 20%, 0.5W, Silicon, Unidirectional, ROHS COMPLIANT, GLASS, QUADROMELF-2

BZQ55-C2V4DT/R13 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerPANJIT
Parts packaging codeMELF
package instructionROHS COMPLIANT, GLASS, QUADROMELF-2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JESD-30 codeO-LELF-R2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation0.5 W
Certification statusNot Qualified
Nominal reference voltage2.4 V
surface mountYES
technologyZENER
Terminal formWRAP AROUND
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance20%
Working test current5 mA
Base Number Matches1

BZQ55-C2V4DT/R13 Preview

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BZQ55-C2V4 SERIES
SURFACE MOUNT ZENER DIODES
VOLTAGE
2.4 to 100 Volts
POWER
500 mWatts
QUADRO-MELF
Unit : inch (mm)
FEATURES
• Planar Die construction
• 500mW Power Dissipation
• Ideally Suited for Automated Assembly Processes
.0
67
.7
(1
)
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: Molded Glass QUADRO-MELF
• Terminals: Solderable per MIL-STD-750, Method 2026
• Polarity: See Diagram Below
• Approx. Weight: 0.008 grams
• Mounting Position: Any
• Packing information
T/R - 2.5K per 7" plastic Reel
.020(0.5)
.012(0.3)
.146(3.7)
.130(3.3)
.020(0.5)
.012(0.3)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Parameter
Power Dissipation at Tamb = 25
Junction Temperature
Storage Temperature Range
Valid provided that leads at a distance of 8mm from case are kept at ambient temperature.
O
Symbol
Value
500
175
-65 to +175
Units
mW
O
C
P
TOT
T
J
T
S
C
C
O
Parameter
Thermal Resi stance Juncti on to Ambi ent Ai r
Forward Voltage at I
F
= 200mA
Symbol
Min.
Typ.
Max.
0.3
1.5
Uni ts
K/mW
V
R
θJA
V
F
--
--
--
--
Vali d provi ded that leads at a di stance of 8mm from case are kept at ambi ent temperature.
STAD-JAN.21.2009
1
.063(1.6)
.055(1.4)DIA.
PAGE . 1
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