BZM55-C43AT/R13 datasheet, PDF

Datasheet> All Categories > Discrete semiconductor> diode> BZM55-C43AT/R13

BZM55-C43AT/R13: DescriptionZener Diode, 43V V(Z), 1%, 0.5W, Silicon, Unidirectional, ROHS COMPLIANT, GLASS, MICROMELF-2; CategoryDiscrete semiconductor diode; File Size103KB，5 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

Download Datasheet Parametric View All

BZM55-C43AT/R13 Overview

Zener Diode, 43V V(Z), 1%, 0.5W, Silicon, Unidirectional, ROHS COMPLIANT, GLASS, MICROMELF-2

BZM55-C43AT/R13 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	PANJIT
Parts packaging code	MELF
package instruction	ROHS COMPLIANT, GLASS, MICROMELF-2
Contacts	2
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	ZENER DIODE
JESD-30 code	O-LELF-R2
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	UNIDIRECTIONAL
Maximum power dissipation	0.5 W
Nominal reference voltage	43 V
surface mount	YES
technology	ZENER
Terminal form	WRAP AROUND
Terminal location	END
Maximum time at peak reflow temperature	NOT SPECIFIED
Maximum voltage tolerance	1%

BZM55-C43AT/R13 Preview

Download Datasheet

View All

BZM55-C2V4 SERIES

SURFACE MOUNT ZENER DIODES

VOLTAGE

2.4 to 100 Volts

POWER

500 mWatts

MICRO-MELF

Unit : inch (mm)

FEATURES

• Planar Die construction

• 500mW Power Dissipation

• Ideally Suited for Automated Assembly Processes

.040(1.0)

.048(1.2)DIA.

• In compliance with EU RoHS 2002/95/EC directives

MECHANICAL DATA

• Case: Molded Glass MICRO-MELF

• Terminals: Solderable per MIL-STD-750, Method 2026

• Polarity: See Diagram Below

• Approx. Weight: 0.011 grams

• Mounting Position: Any

• Packing information

T/R - 2.5K per 7" plastic Reel

.079(2.0)

.071(1.8)

.043(1.1)

.008(0.2)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Parameter

Power Dissipation at Tamb = 25

Junction Temperature

Storage Temperature Range

Valid provided that leads at a distance of 8mm from case are kept at ambient temperature.

Symbol

Value

500

175

-65 to +175

Units

TOT

Parameter

Thermal Resi stance Juncti on to Ambi ent Ai r

Forward Voltage at I

= 200mA

Symbol

Min.

Typ.

Max.

0.3

1.5

Uni ts

K/mW

Vali d provi ded that leads at a di stance of 8mm from case are kept at ambi ent temperature.

STAD-DEC.18.2008

PAGE . 1

Recommended Resources

Joyoung soymilk machine circuit

Amplifier circuit with variable amplification factor

A734 type double-sided yarn machine electrical control improved circuit

Working circuit diagram c of voltage regulator 5

Solid State Pressure Switch Circuit

Electronic hypnotic device circuit diagram 1

Inductor ripple rate r value selection problem: The book on power supply design describes it this way. I have many questions about the inductor current ripple rate.From this formula in the book, we know that r is related to the volt-second product,...; 小太阳yy Switching Power Supply Study Group

BOX unpacking test: After unboxing, verify the BOX function through the APP and take a photo with the sensor in use. Unboxing and charging APP installed successfully DEMO 1 DEMO 2 DEMO 3 Signal StrengthChargingThe device...; 胡万金 ST MEMS Sensor Creative Design Competition

EEWORLD University Hall--Understand the development history of smart home in one minute (video): Learn about the development history of smart home in one minute (video) : https://training.eeworld.com.cn/course/5794In daily life, we often hear the term " smart home ". Not only that, more and more ...; 成都亿佰特 RF/Wirelessly

"Playing with the board" + Yu Zhennan's STM32 development board experiment 2: This content is originally created by EEWORLD forum user chenbingjy . If you want to reprint or use it for commercial purposes, you must obtain the author's consent and indicate the source.Chapter 4: ...; chenbingjy Special Edition for Assessment Centres

[CH579M-R1] + Help: Unable to drive LSM303DLH magnetic field sensor: I bought an LSM303DLH magnetic field sensor module online and planned to use the CH579M-R1 development board to drive it. Here is a photo of the module:There are 8 pins on the module, 4 of which are u...; hujj Domestic Chip Exchange

Components in protection circuits: With the continuous progress of society and the development of the Internet of Things, the outdoor application scenarios of electronic products have continued to grow at a high rate. Electronic produc...; fish001 Analogue and Mixed Signal

Popular Components