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BZD27C13P_R1_00001

Description
Maximum power: 800mW Accuracy: - Reverse leakage current: 2uA @ 10V Regulated voltage value (typical value): 13V
CategoryDiscrete semiconductor    Zener diode   
File Size110KB,6 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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BZD27C13P_R1_00001 Overview

Maximum power: 800mW Accuracy: - Reverse leakage current: 2uA @ 10V Regulated voltage value (typical value): 13V

BZD27C13P_R1_00001 Parametric

Parameter NameAttribute value
Maximum power800mW
Accuracy-
Reverse leakage current2uA @ 10V
Stable voltage value (typical value)13V

BZD27C13P_R1_00001 Preview

Download Datasheet
BZD27C3V6P~BZD27C75P
VOLTAGE REGULATOR DIODES
VOLTAGE
FEATURES
0.075(1.90)
0.067(1.70)
3.6 to 75 Volts
POWER
800 mW
Sillicon Planar Zener Diode
Low profile surface-mount package
Zener and surge current specification
Low leakage current
Excellent stability
High temperature soldering : 260 C/10 sec. at terminals
Lead free in comply with EU RoHS 2011/65/EU directives
Green molding compound as per IEC61249 Std. . (Halogen Free)
0.145(3.70)
0.137(3.50)
O
0.115(2.90)
0.106(2.70)
MECHANICAL DATA
Case: SOD-123FL
Terminals : Solderable per MIL-STD-750,Method 2026
Approx Weight: 0.0168 grams
0.030(0.75)
0.017(0.45)
1
2
Cathode
Anode
ABSOLUTE MAXIMUM RATINGS
(TA=25
O
C , unless otherwise specified)
Parameter
Power dissipation
Test conditon
T
L
=80
O
C
T
A
=25
O
C
100
μ
s square pulse(note 2)
Non-repetitive peak pulse power dissipation
10/1000
μ
s waveform (BZD27-C7V5P to BZD27-C75P)
P
RSM
150
Symbol
P
TOT
P
TOT
P
ZSM
Value
2.3
0.8 (note 1)
300
W
Units
W
THERMAL CHARACTERISTICS
(TA=25
O
C , unless otherwise noted)
P a ra me te r
The r m a l r e s i s t a nc e j unc t i o n t o a m b i e nt a i r
The r m a l r e s i s t a nc e j unc t i o n t o l e a d
M a xi m um j unc t i o n t e m p e r a t ur e
S t o r a g e t e m p e r a t ur e r a ng e
Te s t c o n d i t i o n
S ym b o l
R
θ
J A
R
θ
J L
Τ
J
T
s
Va l ue
180
30
150
-5 5 to + 1 5 0
U ni t
K /W
K /W
O
0.008(0.20)
0.004(0.10)
C
C
O
ELCTRICAL CHARACTERISTICS
PA RA M E TE R
F o r w a r d vo l t a g e
Te s t c o n d i t i o n
I
F
= 0 . 2 A
S ym b o l
V
F
Mi n
Ty p
Max
1.2
0.044(1.10)
0.031(0.80)
0.043(1.08)
0.038(0.98)
U ni t s
V
NOTES:
1. Mounted on epoxy-glass PCB with 3X3 mm Cu pads (>40m thick)
2. T
J
=25
O
C prior to surge
STAD-JAN.12.2007
PAGE . 1
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