BSS123 datasheet, PDF - EEWORLD Datasheet

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BSS123: DescriptionDrain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 200mA Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 5Ω @ 200mA, 10V Maximum power dissipation (Ta =25°C): 350mW Type: N-channel; CategoryDiscrete semiconductor MOS (field effect tube); File Size303KB，3 Pages; ManufacturerANBON SEMICONDUCTOR; Websitehttp://www.formosagr.com/; Anbon (AS) is a world-leading manufacturer of the chip and package of SiC Diodes, Si Diodes, and MOS in semiconductor industry. Their core technology has the advantages of upstream and downstream integration. AS focuses on the development and production of power semiconductor devices such as MOS, TVS, Schottky diodes, and more. AS products are divided into automotive, industrial, and commercial.

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Drain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 200mA Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 5Ω @ 200mA, 10V Maximum power dissipation (Ta =25°C): 350mW Type: N-channel

BSS123 Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	100V
Continuous drain current (Id) at 25°C	200mA
Gate-source threshold voltage	2.5V @ 250uA
Drain-source on-resistance	5Ω @ 200mA,10V
Maximum power dissipation (Ta=25°C)	350mW
type	N channel

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