BRFL12N65
Rev.F Nov.-2017
DATA SHEET
描述
/
Descriptions
TO-220FL
塑封封装
N
沟道
MOS
场效应管。N-CHANNEL
MOSFET in a TO-220FL Plastic Package.
特征
/ Features
½栅电荷,½反馈电容,开关速度快。
Low gate charge, Low Crss , Fast switching.
用途
/
Applications
用于高频开关电源,电子镇流器,UPS 电源。
High efficiency switch mode power supplies, Electronic lamp ballasts based on half bridge, UPS .
内部等效电路
/ Equivalent Circuit
引脚排列
/ Pinning
1 2
3
PIN1:G
放大及印章代码
PIN 2:D
PIN 3:S
/ h
FE
Classifications & Marking
见印章说明。See
Marking Instructions.
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BRFL12N65
Rev.F Nov.-2017
DATA SHEET
极限参数
/ Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
符号
Symbol
V
DSS
I
D
(Tc=25℃)
I
D
(Tc=100℃)
I
DM
V
GSS
E
AS
E
AR
I
AR
R
θJC
R
θJA
P
D
T
J
,T
STG
数值
Rating
650
12
7.6
48
±30
880
25
12
2.45
62.5
51
-55 to 150
单½
Unit
V
A
A
A
V
mJ
mJ
A
℃
/W
℃
/W
W
℃
Drain-Source Voltage
Drain Current
Drain Current
Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Avalanche Current
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Power Dissipation
Operating and Storage Temperature Range
电性½参数
/ Electrical Characteristics(Ta=25℃)
参数
Parameter
符号
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
FS
V
SD
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=300V
R
G
=25Ω
I
D
=12A
V
DS
=25V
f=1.0MHz
V
GS
=0V
测试条件
Test Conditions
V
GS
=0V
V
DS
=650V
V
GS
=±30V
V
DS
=V
GS
V
GS
=10V
V
DS
=40V
V
GS
=0V
I
D
=250μA
V
GS
=0V
V
DS
=0V
I
D
=250μA
I
D
=6A
I
D
=6A
I
S
=12A
1790
175
23
78
133
233
104
2.0
0.71
13
1.39
2410
229
31
102
175
305
160
最小值 典型值 最大值 单½
Min
Typ
Max
Unit
650
1.0
±100
4.0
0.78
V
μA
nA
V
Ω
S
V
pF
pF
pF
ns
ns
ns
ns
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Forward
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Drain-Source Diode Forward
Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
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