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BRCS20P04DP

Description
Drain-source voltage (Vdss): 40V Continuous drain current (Id) (at 25°C): 20A (Tc) Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 35mΩ @ 18A, 10V Maximum power consumption Dispersion (Ta=25°C): 50W(Tc) Type: P-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size477KB,7 Pages
ManufacturerFoshan Blue Rocket Electronics Co.,Ltd.
Websitehttp://www.fsbrec.com/
Foshan Blue Arrow Electronics Co., Ltd. is a high-tech enterprise in Guangdong Province and a professional R&D manufacturer of semiconductor devices in China. The company was formerly Foshan Radio Factory No. 4, which was founded in the early 1970s. It was transformed into a limited liability company in 1998 and changed its shares to Foshan Blue Arrow Electronics Co., Ltd. in 2012. At present, it has formed an annual production scale of 10 billion units and is one of the main semiconductor device production bases in South China. The company's factory is located in Chancheng District, Foshan City, with a plant area of ​​45,000 square meters. The company has a large number of advanced production lines, and its product series include various packaged bipolar transistors, field effect transistors (MOSFET), various switches, voltage regulators, Schottky (SBD), fast recovery (FRD) and other diodes, thyristors (silicon controlled rectifiers), integrated circuits (ICs), LEDs and LED lighting fixtures, etc. The products are widely used in household appliances, power supplies, IT digital, communications, new energy, automotive electronics, instrumentation, display screens, lighting, backlight sources and other fields. The company has passed ISO9001 quality management system certification since 1997, ISO14001 environmental management system certification in 2005, ISO/TS16949 (IATF16949) automotive industry quality management system standard certification in 2013, and OHSAS18001 certification in 2015. At present, the company has established the Guangdong Semiconductor Device Engineering Technology Research and Development Center and the Guangdong Enterprise Technology Center. In 2008, the "Blue Arrow" brand transistor was recognized as a famous brand product in Guangdong Province.
Download Datasheet Parametric View All

BRCS20P04DP Overview

Drain-source voltage (Vdss): 40V Continuous drain current (Id) (at 25°C): 20A (Tc) Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 35mΩ @ 18A, 10V Maximum power consumption Dispersion (Ta=25°C): 50W(Tc) Type: P-channel

BRCS20P04DP Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)40V
Continuous drain current (Id) at 25°C20A(Tc)
Gate-source threshold voltage2.5V @ 250uA
Drain-source on-resistance35mΩ @ 18A,10V
Maximum power dissipation (Ta=25°C)50W(Tc)
typeP channel

BRCS20P04DP Preview

Download Datasheet
BRCS20P04DP
Rev.B Jul.-2018
DATA SHEET
描述
/
Descriptions
TO-252
塑封封装
P
沟道
MOS
场效应管。P-CHANNEL
MOSFET in a TO-252 Plastic Package.
特征
/ Features
½栅电荷,½反馈电容,开关速度快。
Low gate charge, low crss, fast switching.
用途
/
Applications
用于½压电路如:½½电路、
DC/DC
½换、便携式产品的电源高效½换。
Suited for low voltage applications such as automotive,DC/DC Converters,and high
efficiency
switching for power management in protable and battery operated products.
内部等效电路
/ Equivalent Circuit
引脚排列
/ Pinning
4
1
3
2
PIN1:G
放大及印章代码
PIN 2:D
PIN 3:S
PIN 4:D
/ h
FE
Classifications & Marking
见印章说明。See
Marking Instructions.
http://www.fsbrec.com
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