BR20N40 datasheet, PDF - EEWORLD Datasheet

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BR20N40: DescriptionDrain-source voltage (Vdss): 400V Continuous drain current (Id) (at 25°C): 20A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 400mΩ @ 10A, 10V Maximum power dissipation (Ta= 25°C): 280W Type: N-channel; CategoryDiscrete semiconductor MOS (field effect tube); File Size973KB，6 Pages; ManufacturerFoshan Blue Rocket Electronics Co.,Ltd.; Websitehttp://www.fsbrec.com/; Foshan Blue Arrow Electronics Co., Ltd. is a high-tech enterprise in Guangdong Province and a professional R&D manufacturer of semiconductor devices in China. The company was formerly Foshan Radio Factory No. 4, which was founded in the early 1970s. It was transformed into a limited liability company in 1998 and changed its shares to Foshan Blue Arrow Electronics Co., Ltd. in 2012. At present, it has formed an annual production scale of 10 billion units and is one of the main semiconductor device production bases in South China. The company's factory is located in Chancheng District, Foshan City, with a plant area of 45,000 square meters. The company has a large number of advanced production lines, and its product series include various packaged bipolar transistors, field effect transistors (MOSFET), various switches, voltage regulators, Schottky (SBD), fast recovery (FRD) and other diodes, thyristors (silicon controlled rectifiers), integrated circuits (ICs), LEDs and LED lighting fixtures, etc. The products are widely used in household appliances, power supplies, IT digital, communications, new energy, automotive electronics, instrumentation, display screens, lighting, backlight sources and other fields. The company has passed ISO9001 quality management system certification since 1997, ISO14001 environmental management system certification in 2005, ISO/TS16949 (IATF16949) automotive industry quality management system standard certification in 2013, and OHSAS18001 certification in 2015. At present, the company has established the Guangdong Semiconductor Device Engineering Technology Research and Development Center and the Guangdong Enterprise Technology Center. In 2008, the "Blue Arrow" brand transistor was recognized as a famous brand product in Guangdong Province.

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BR20N40 Overview

Drain-source voltage (Vdss): 400V Continuous drain current (Id) (at 25°C): 20A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 400mΩ @ 10A, 10V Maximum power dissipation (Ta= 25°C): 280W Type: N-channel

BR20N40 Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	400V
Continuous drain current (Id) at 25°C	20A
Gate-source threshold voltage	4V @ 250uA
Drain-source on-resistance	400mΩ @ 10A,10V
Maximum power dissipation (Ta=25°C)	280W
type	N channel

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BR20N40

Rev.C Jul.-2018

DATA SHEET

描述

Descriptions

TO-220

塑封封装

沟道

MOS

场效应管。N-CHANNEL

MOSFET in a TO-220 Plastic Package.

特征

/ Features

½栅极电荷，开关速度快，雪崩½量高，dv/dt ½力强。

Low gate charge, Fast switching capability, Avalanche energy specified, Improved dv/dt capability.

用途

Applications

用于高电压、高速功率开关应用，如高效率开关模电源、功率因数校正。

Designed for high voltage, high speed power switching applications such as high efficiency switched

mode power supplies, active power factor correction.

内部等效电路

/ Equivalent Circuit

引脚排列

/ Pinning

PIN1：G

放大及印章代码

PIN 2：D

PIN 3：S

/ h

Classifications & Marking

见印章说明。

See Marking Instructions.

http://www.fsbrec.com

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