BG50B12LX2R-I datasheet, PDF - EEWORLD Datasheet

BG50B12LX2R-I: DescriptionIndustrial grade IGBT module; CategoryDiscrete semiconductor; File Size328KB，9 Pages; ManufacturerBYD; Websitehttp://www.byd.com/; Shenzhen BYD Microelectronics Co., Ltd. is an independent subsidiary of BYD Group. Since 2003, it has been committed to the development of integrated circuits and power devices, and provides a complete set of solutions for product applications. Based on independent research and development, BYD Microelectronics has successfully developed a number of world-leading products by taking advantage of China's huge demand for electronic components, abundant technical talents, and strong support from global professional partners, and has obtained a number of national and international patents. Many of its IC and power device products have been certified and used in batches by many internationally renowned companies including Nokia and Samsung. Shenzhen BYD Microelectronics focuses on the research and development and production of semiconductor products: the main products are IGBT chips and modules, intelligent power modules (IPM), AC-DC chips, battery protection and management chips, power field effect transistors (MOSFET), CMOS image sensors, touch control chips, touch panels, ESD protection diodes, intelligent power battery management, current sensors, etc.

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BG50B12LX2R-I Overview

Industrial grade IGBT module

Parameters

Type：Industrial grade IGBT Module

Package：34mm

Features：50A/1200V Half Bridge Low loss

Application

Application：Electronic welding, AC motor control Inverters, Servo, UPS

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