BF487 datasheet, PDF - EEWORLD Datasheet

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BF487: DescriptionNPN transistor; CategoryDiscrete semiconductor; File Size113KB，1 Pages; ManufacturerJCET; Websitehttp://www.cj-elec.com/; Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

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BF487 Overview

NPN transistor

Features

Product Name: NPN Transistor

Product model: BF487

Product parameters:

Pcm (maximum power dissipation): 830mW

Ic (collector current): 100mA

BVcbo (collector-base breakdown voltage): 400V

BVceo (collector-emitter breakdown voltage): 350V

BVebo (emitter-base breakdown voltage): 5V

hFE (current gain): Min: 20

VCE (sat) saturation voltage drop: 0.6V

fT (transition frequency): 70MHz

Package: TO-92

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors

TO – 92

BF483/BF485/BF487

FEATURES

Low Feedback Capacitance

TRANSISTOR (NPN)

1.EMITTER

2.COLLECTOR

3.BASE

APPLICATIONS

Intended for Use in Video Output Stages in

Black-and-white and in Colour Television Receivers.

MAXIMUM RATINGS (T

=25℃ unless otherwise noted)

Symbol

CBO

Parameter

Value

Unit

BF483

Collector-Base Voltage

BF485

BF487

BF483

CEO

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

Storage Temperature

BF485

BF487

EBO

θJA

stg

300

350

400

250

300

350

0.1

830

150

-55~+150

℃/W

℃

ELECTRICAL CHARACTERISTICS (T

=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Symbol

(BR)CBO

Test

conditions

BF483

=100µA,I

BF485

BF487

BF483

Collector-emitter breakdown voltage

(BR)CEO

(BR)EBO

CBO

EBO

FE(1)

FE(2)

CE(sat)

=1mA,I

=100μA,I

=300V,I

=5V,I

=20V, I

=25mA

=20V, I

=40mA

=30mA,I

=5mA

=10V,I

= 10mA,f=100MHz

=30V,I

=0, f=1MHz

1.4

0.6

MHz

BF485

BF487

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Transition frequency

Collector output capacitance

Min

300

350

400

250

300

350

0.1

μA

Typ

Max

Unit

A,Dec,2010

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