BD690CST/R13 datasheet, PDF - EEWORLD Datasheet

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BD690CST/R13: DescriptionRectifier Diode, Schottky, 1 Phase, 2 Element, 3A, 90V V(RRM), Silicon, TO-252, ROHS COMPLIANT, PLASTIC, DPAK-3; CategoryDiscrete semiconductor diode; File Size109KB，3 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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BD690CST/R13 Overview

Rectifier Diode, Schottky, 1 Phase, 2 Element, 3A, 90V V(RRM), Silicon, TO-252, ROHS COMPLIANT, PLASTIC, DPAK-3

BD690CST/R13 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	PANJIT
Parts packaging code	TO-252
package instruction	ROHS COMPLIANT, PLASTIC, DPAK-3
Contacts	3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Other features	FREE WHEELING DIODE, LOW POWER LOSS
application	EFFICIENCY
Shell connection	CATHODE
Configuration	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JEDEC-95 code	TO-252
JESD-30 code	R-PSSO-G2
Maximum non-repetitive peak forward current	75 A
Number of components	2
Phase	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Maximum output current	3 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	90 V
surface mount	YES
technology	SCHOTTKY
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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BD640CS~BD6200CS

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

VOLTAGE

FEATURES

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-O

• For surface mounted applications

• Low profile package

• Built-in strain relief

• Low power loss, High efficiency

• High surge capacity

• For use in low voltage high frequency inverters, free wheeling, and

polarity protection applications

• High temperature soldering guaranteed:260

C/10 seconds at terminals

• In compliance with EU RoHS 2002/95/EC directives

40 to 200 Volts

CURRENT

6.0 Amperes

MECHANICALDATA

• Case: D PAK/TO-252 molded plastic

• Terminals: Solder plated, solderable per MIL-STD-750,Method 2026

• Polarity: As marking

• Standard packaging: 16mm tape (EIA-481)

• Weight: 0.0104 ounces, 0.297grams.

MAXIMUM RATINGS

Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

PA RA M E TE R

M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e

M a xi m um R M S V o l t a g e

M a xi m um D C B l o c k i ng V o l t a g e

M a xi m um A ve r a g e F o r w a r d C ur r e nt ( S e e F i g ur e 1 )

P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 m s s i ng l e ha l f s i ne - w a ve

s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )

M a xi m um F o r w a r d V o l t a g e a t 3 . 0 A p e r l e g

M a xi m um D C R e ve r s e C ur r e nt T

= 2 5

a t R a t e d D C B l o c k i ng Vo l t a g e T

= 1 0 0

Ty p i c a l T h e r m a l R e s i s t a n c e

O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e

S YM B O L

RRM

RMS

F ( A V )

F S M

J C

, T

S TG

BD640CS

BD645CS

BD650CS

BD660CS

BD680CS

BD690CS BD6100CS BD6150CS BD6200CS

U N IT S

31.5

6 .0

100

150

105

150

200

140

200

0 .7 0

0 .7 5

0 .0 5

0 .8 0

0 .9 0

C / W

-5 5 to +1 5 0

-6 5 to +1 7 5

Note: Both Bonding and Chip structure are available.

STAD-APR.30.2009

PAGE . 1

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