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BC857BLT1

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size36KB,1 Pages
ManufacturerJCET
Websitehttp://www.cj-elec.com/

Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); ​​QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

 

 

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BC857BLT1 Overview

Transistor

BC857BLT1 Parametric

Parameter NameAttribute value
MakerJCET
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.1 A
ConfigurationSingle
Minimum DC current gain (hFE)220
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)0.2 W
surface mountYES
Nominal transition frequency (fT)100 MHz

BC857BLT1 Preview

Download Datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
BC856ALT1, BLT1
TRANSISTOR (PNP)
BC857ALT1, BLT1 CLT1
BC858ALT1, BLT1 CLT1
FEATURES
Power dissipation
P
CM:
0.225
W (Tamb=25℃) Note1
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
1. 0
Collector current
I
CM:
-0.1
A
Collector-base voltage
V
CBO:
BC856
-80 V
BC857
-50 V
BC858
-30 V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
Note1: Transistor mounted on an FR4 Printed-circuit board.
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
BC856
BC857
BC858
Collector-emitter breakdown voltage
BC856
BC857
BC858
Emitter-base breakdown voltage
Collector cut-off current
BC856
BC857
BC858
Collector cut-off current
BC856
BC857
BC858
Emitter cut-off current
DC current gain
BC856A, 857A,858A
BC856B, 857B,858B
BC857C,BC858C
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE
(sat)
V
BE
(sat)
h
FE(1)
I
EBO
I
CEO
I
CBO
V
EBO
V
CEO
V
CBO
2. 4
1. 3
2. 9
1. 9
0. 95
0. 95
Unit: mm
unless otherwise specified)
Symbol
Test
conditions
MIN
-80
Ic= -10
µ
A, I
E
=0
-50
-30
-65
Ic= -10 mA, I
B
=0
-45
-30
I
E
= -10
µ
A, I
C
=0
V
CB
= -70 V , I
E
=0
V
CB
= -45 V , I
E
=0
V
CB
= -25 V , I
E
=0
V
CE
= -60 V , I
B
=0
V
CE
= -40 V , I
B
=0
V
CE
= -25 V , I
B
=0
V
EB
= -5 V ,
I
C
=0
125
V
CE
= -5V, I
C
= -2mA
220
420
I
C
=-100mA, I
B
= -5 mA
I
C
= -100 mA, I
B
= -5mA
V
CE
= -5 V, I
C
= -10mA
-0.1
250
475
800
-0.5
-1.1
V
V
-0.1
-0.1
-5
V
V
V
MAX
UNIT
0. 4
µ
A
µ
A
µ
A
Transition frequency
f
T
f=
100MHz
100
MHz
DEVICE MARKING
BC856ALT1=3A; BC856BLT1=3B; BC857ALT1=3E;BC857BLT1=3F;
BC857CLT1=3G; BC858ALT1=3J; BC858BLT1=3K; BC858CLT1=3L
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