BC856B datasheet, PDF - EEWORLD Datasheet

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BC856B: Description100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR; Categorysemiconductor Discrete semiconductor; File Size331KB，2 Pages; ManufacturerNanjing International Group Co.,Ltd

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BC856B Overview

100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR

100 mA, 65 V, PNP, 硅, 小信号晶体管

BC856B Parametric

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	PNP
Maximum collector current	0.1000 A
Maximum Collector-Emitter Voltage	65 V
Processing package description	SOT-23, 3 PIN
state	TRANSFERRED
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
Terminal location	pair
Packaging Materials	Plastic/Epoxy
structure	single
Number of components	1
Transistor component materials	silicon
Maximum ambient power consumption	0.3300 W
Transistor type	Universal small signal
Rated crossover frequency	150 MHz

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