BC846_09 datasheet, PDF - EEWORLD Datasheet

BC846_09: Description100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB; Categorysemiconductor Discrete semiconductor; File Size587KB，6 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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BC846_09 Overview

100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB

100 mA, 65 V, NPN, 硅, 小信号晶体管, TO-236AB

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	NPN
Maximum collector current	0.1000 A
Maximum Collector-Emitter Voltage	65 V
Processing package description	PLASTIC PACKAGE-3
Lead-free	Yes
EU RoHS regulations	Yes
China RoHS regulations	Yes
state	ACTIVE
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
terminal coating	tin
Terminal location	pair
Packaging Materials	Plastic/Epoxy
structure	single
Number of components	1
transistor applications	switch
Transistor component materials	silicon
Maximum ambient power consumption	0.2500 W
Transistor type	Universal small signal
Minimum DC amplification factor	110
Rated crossover frequency	100 MHz

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