BC846,BC847,BC848,BC849,BC850 SERIES
NPN GENERAL PURPOSE TRANSISTORS
VOLTAGE
FEATURES
• General purpose amplifier applications
• NPN epitaxial silicon, planar design
• Collector current IC = 100mA
•
In compliance with EU RoHS 2002/95/EC directives
30/45/65 Volts
CURRENT
225 mWatts
MECHANICAL DATA
Case: SOT-23, Plastic
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.008 gram
D evi e M ar i g:
c
kn
B C 846A =46A
B C 846B =46B
B C 847A =47A
B C 847B =47B
B C 847C =47C
B C 848A =48A
B C 848B =48B
B C 848C =48C
B C 849B =49B
B C 849C =49C
B C 850B =50B
B C 850C =50C
ABSOLUTE RATINGS
PARAMETER
Collector - Emitter Voltage
B C 846
BC847,BC850
BC848,BC849
B C 846
BC847,BC850
BC848,BC849
B C 846
BC847,BC850
BC848,BC849
Symbol
V
CEO
Value
65
45
30
80
50
30
6.0
6.0
5.0
100
Units
V
Collector - Base Voltage
V
CBO
V
Emitter - Base Voltage
V
EBO
V
Collector Current - Continuous
I
C
mA
THERMAL CHARACTERISTICS
PA R A M E TE R
M ax P ow erD i si aton ( ot 1)
s p i
N e
Ther alR esi t nce ,Juncton t A m bi nt
m
sa
i o
e
Juncton Tem per t r
i
aue
S t r ge Tem per t r
oa
aue
S ym bol
P
TO T
Rθ
JA
T
J
STG
TI
Val e
u
225
556
- 5 t 150
5 o
- 5 t 150
5 o
U nis
t
mW
O
C/
W
O
C
C
O
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in.
REV.0.3-FEB.10.2009
PAGE . 1
BC846,BC847,BC848,BC849,BC850 SERIES
ELECTRICAL CHARACTERISTICS
PA RA M E TE R
B C 8 4 6 A /B
C o lle c to r - E mi tte r B re a k d o wn Vo lta g e B C 8 4 7 A /B /C ,B C 8 5 0 B /C
B C 8 4 8 A /B /C ,B C 8 4 9 B /C
C o lle c to r - B a s e B re a k d o wn Vo lta g e
B C 8 4 6 A /B
B C 8 4 7 A /B /C ,B C 8 5 0 B /C
B C 8 4 8 A /B /C ,B C 8 4 9 B /C
B C 8 4 6 A /B
B C 8 4 7 A /B /C ,B C 8 5 0 B /C
B C 8 4 8 A /B /C ,B C 8 4 9 B /C
S ym b o l
Te s t C o n d i t i o n
M IN .
65
45
30
80
50
30
6 .0
6 .0
5 .0
-
-
T YP.
MA X .
U ni t s
V
(B R)
C E O
IC=1.0m
A , IB = 0
-
-
V
V
(B R)
C B O IC = 1 0 u A , IE = 0
-
-
V
E mi tte r - B a s e B re a k d o wn Vo lta g e
V
(B R)
E B O IE = 1 0 u A , IC = 0
-
-
V
E m i t t e r - B a s e C ut o f f C ur r e nt
C o l l e c t o r - B a s e C ut o f f C ur r e nt
D C C ur r e nt G a i n
B C 8 4 6 ~ B C 8 4 8 S uf f i x " A "
B C 8 4 6 ~ B C 8 5 0 S uf f i x " B "
B C 8 4 7 ~ B C 8 5 0 S uf f i x " C "
B C 8 4 6 ~ B C 8 4 8 S uf f i x " A "
B C 8 4 6 ~ B C 8 5 0 S uf f i x " B "
B C 8 4 7 ~ B C 8 5 0 S uf f i x " C "
I
E B O
I
C B O
V E B =5
V C B = 3 0 V , IE = 0
V C B = 3 0 V , IE = 0 , T
J
= 1 5 0
O
C
IC = 1 0 u A , V C E = 5 V
-
-
90
150
270
180
290
520
-
0 .7
0 .9
0 .6 6 0
-
-
100
15
5 .0
-
nA
nA
uA
-
h
F E
-
D C C ur r e nt G a i n
h
F E
IC = 2 . 0 m A , V C E = 5 V
IC = 1 0 m A , IB = 0 . 5 m A
IC = 1 0 0 m A , IB = 5 . 0 m A
IC = 1 0 m A , IB = 0 . 5 m A
IC = 1 0 0 m A , IB = 5 . 0 m A
IC = 2 m A , V C E = 5 . 0 V
IC = 1 0 m A , V C E = 5 . 0 V
V C B = 1 0 V , IE = 0 , f = 1 M H
11 0
200
420
-
-
0 .5 8
-
-
220
450
800
0 .2 5
0 .6
-
0 .7 0
0 .7 7
4 .5
-
C o l l e c t o r - E m i t t e r S a t ur a t i o n Vo l t a g e
B a s e - E m i t t e r S a t ur a t i o n Vo l t a g e
B a s e - E mi tte r Vo lta g e
C o l l e c t o r - B a s e C a p a c i t a nc e
V
C
E(S AT)
V
B
E (S AT)
V
B
E (S AT)
C
CBO
V
V
V
pF
NPN
REV.0.3-FEB.10.2009
PAGE . 2
BC846,BC847,BC848,BC849,BC850 SERIES
ELECTRICA5L CHARACTERISTICS CURVE (BC846B,BC847B,BC848B,BC849B,BC850B)
100
V
CB
=30V
500
450
400
T
J
=150˚ C
V
CE
=5V
I
CB0
, Collector Current (nA)
10
hF
E
350
300
250
200
T
J
=100˚ C
T
J
=25 ˚C
1
150
100
50
0
25
50
75
100
125
150
Junction Temperature, T
J
(
O
C)
0
0.01
0.1
1
10
100
1000
Collector Current, IC (mA)
Fig. 1. Typical I
CB0
vs. Junction Temperature
1200
1000
Fig. 2. Typical h
FE
vs. Collector Current
1000
T
J
= 25 ˚C
T
J
= 100 ˚C
V
CE(sat)
(mV)
,
100
T
J
= 100 ˚C
T
J
= 150 ˚C
800
V
BE(ON)
(mV)
,
600
400
V
CE
=5V
T
J
= 25 ˚C
I
C
/I
B
=20
200
T
J
= 150 ˚C
0
0.01
0.1
1
10
100
1000
10
0.01
0.1
1
10
100
1000
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
Fig. 3. Typical V
BE(ON)
vs. Collector Current
1200
Fig. 4. Typical V
CE(SAT)
vs. Collector Current
10
1000
T
J
= 25 ˚C
800
T
J
= 100 ˚C
C
ib (EB)
T
J
= 25 ˚C
600
Capacitance, C (pF
)
V
BE(sat)
(mV)
,
C
ob (CB)
400
200
T
J
= 150 ˚C
I
C
/I
B
=20
0
0.01
1
0.1
1
10
100
0.1
1
10
100
Collector Current, I
C
(mA)
Reverse Voltage (V)
Fig. 5. Typical V
BE(SAT)
vs. Collector Current
Fig. 6. Typical Capacitances vs. Reverse Voltage
REV.0.3-FEB.10.2009
PAGE . 4
BC846,BC847,BC848,BC849,BC850 SERIES
ELECTRICAL CHARACTERISTICS CURVE (BC847C,BC848C,BC849C,BC850C)
100
V
CB
=30V
1200
V
CE
=5V
I
CB0
, Collector Current (nA)
1000
T
J
=150˚ C
10
hF
E
800
T
J
=100˚ C
600
T
J
=25 C
1
400
200
0
25
50
75
100
125
150
Junction Temperature, T
J
(
O
C)
0
0.01
0.1
1
10
100
1000
Collector Current, IC, (mA)
Fig. 1. Typical I
CB0
vs. Junction Temperature
1200
1000
Fig. 2. Typical h
FE
vs. Collector Current
1000
800
T
J
= 100 ˚C
T
J
= 25 ˚C
V
CE(sat)
(mV)
,
T
J
= 100 ˚C
100
T
J
= 150 ˚C
V
BE(ON)
(mV)
,
600
400
T
J
= 25 ˚C
200
T
J
= 150 ˚C
V
CE
=5V
I
C
/I
B
=20
0
0.01
0.1
1
10
100
1000
10
0.01
0.1
1
10
100
1000
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
Fig. 3. Typical V
BE(ON)
vs. Collector Current
1200
Fig. 4. Typical V
CE(SAT)
vs. Collector Current
10
1000
C
ib (EB)
800
T
J
= 25 ˚C
V
BE(sat)
(mV)
,
T
J
= 100 ˚C
600
400
I
C
/I
B
=20
T
J
= 150 ˚C
0
0.01
Capacitance, C (pF
)
T
J
= 25 ˚C
C
ob (CB)
200
1
0.1
1
10
100
0.1
1
10
100
Collector Current, I
C
(mA)
Reverse Voltage (V)
Fig. 5. Typical V
BE(SAT)
vs. Collector Current
Fig. 6. Typical Capacitances vs. Reverse Voltage
REV.0.3-FEB.10.2009
PAGE . 5
Parametric
View All
MCU
京公网安备 11010802033920号
EEWORLD
