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BC817-16W-R2-10001

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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BC817-16W-R2-10001 Overview

Transistor

BC817-16W-R2-10001 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instruction,
Reach Compliance Codecompliant
Maximum collector current (IC)0.5 A
ConfigurationSingle
Minimum DC current gain (hFE)100
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.3 W
surface mountYES
Nominal transition frequency (fT)100 MHz
Base Number Matches1

BC817-16W-R2-10001 Preview

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BC817-16W SERIES
NPN GENERAL PURPOSE TRANSISTORS
VOLTAGE
FEATURES
• General purpose amplifier applications
• NPN epitaxial silicon, planar design
• Collector current I
C
= 500mA
• Lead free in comply with EU RoHS 2011/65/EU directives
• Green molding compound as per IEC61249 Std. .
(Halogen Free)
45 Volts
POWER
300 mW
MECHANICAL DATA
• Case : SOT-323, Plastic
• Terminals : Solderable per MIL-STD-750, Method 2026
• Approx. Weight : 0.001 ounce, 0.005 gram
• Device Marking : BC817-16W : 8S
BC817-25W : 8V
BC817-40W : 8W
MAXIMUM RATINGS
PARAMETER
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Total Power Dissipation ( NOTE )
Junction and Storage Temperature Range
SYMBOL
V
CEO
V
CBO
V
EBO
I
C
P
TOT
T
J
, T
STG
Value
45
50
5.0
500
300
-55 to +150
UNIT
V
V
V
mA
mW
o
C
THERMAL CHARACTERISTICS
PARAMETER
Thermal Resistance Junction to Ambient ( NOTE )
SYMBOL
R
JA
Value
420
UNIT
o
C
/W
NOTE : Transistor mounted on FR-5 board minimum pad mounting conditions.
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