BAW56DW_S1_00001 datasheet, PDF

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BAW56DW_S1_00001: DescriptionRectifier Diode, 4 Element, 0.15A, 100V V(RRM), Silicon, GREEN, PLASTIC PACKAGE-6; CategoryDiscrete semiconductor diode; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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BAW56DW_S1_00001 Overview

Rectifier Diode, 4 Element, 0.15A, 100V V(RRM), Silicon, GREEN, PLASTIC PACKAGE-6

BAW56DW_S1_00001 Parametric

Parameter Name	Attribute value
package instruction	GREEN, PLASTIC PACKAGE-6
Reach Compliance Code	compliant
ECCN code	EAR99
Configuration	2 BANKS, COMMON ANODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	R-PDSO-G6
Number of components	4
Number of terminals	6
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	0.15 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Maximum power dissipation	0.2 W
Maximum repetitive peak reverse voltage	100 V
Maximum reverse recovery time	0.004 µs
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Base Number Matches	1

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BAS16TW/BAW56DW/BAV70DW/BAV99S

SURFACE MOUNT SWITCHING DIODES

VOLTAGE

FEATURES

• Fast switching speed.

• Surface mount package Ideally Suited for Automatic insertion

• High Conductance

• Lead free in comply with EU RoHS 2011/65/EU directives

• Green molding compound as per IEC61249 Std. . (Halogen Free)

0.054(1.35)

0.045(1.15)

0.030(0.75)

0.021(0.55)

100 Volts

POWER

200mWatts

0.087(2.20)

0.074(1.90)

0.010(0.25)

0.018(0.45)

0.006(0.15)

0.010(0.25)

0.003(0.08)

0.040(1.00)

0.031(0.80)

0.044(1.10)

MAX.

0.056(1.40)

0.047(1.20)

MECHANICAL DATA

• Case: SOT-363, Plastic

• Terminals: Solderable per MIL-STD-750, Method 2026

0.012(0.30)

0.005(0.15)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

C ambient temperature unless otherwise specified. For capacitive load, derate current by 20%.

PARAMETER

Marking Code

Reverse Voltage

Peak Reverse Voltage

Rectified Current (Average),Half Wave Rectification With

Resistive Load and f>50Hz

Peak Forward Surge Current, 1.0s

Power Dissipation Derate Above 25

SYMBOL

FSM

TOT

BAS16TW

16T

BAW56DW

100

150

4.0

200

0.715@I

=0.001A

0.855@I

=0.01A

1.0@I

=0.05A

1.25@I

=0.15A

0.03

2.5

1.5

4.0

625

-55 to +150

Fig.48

Fig.51

Fig.52

Fig.32

BAV70DW

0.004(0.10)

0.000(0.00)

• Weight: approximately 0.006gram

BAV99S

0.087(2.20)

0.078(2.00)

UNITS

Maximum Forward Voltage

Maximum DC Reverse Current at 25V

75V

Maximum Junction Capacitance (Note 1)

Maximum Reverse Recovery Time (Note 2)

Typical Thermal Resistance

Operating Junction and Storage Temperature Range

Circuit Figure

JA

STG

A

C/W

NOTE : 1. Reverse Bias Voltage = 0. f=1MHz

2. I

=10mA to I

=1mA. V

=6V. Load=100

February 7,2013-REV.02

PAGE . 1

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