BAV199W datasheet, PDF - EEWORLD Datasheet

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BAV199W: Description0.135 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE; CategoryDiscrete semiconductor diode; File Size135KB，3 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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BAV199W Overview

0.135 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE

0.135 A, 85 V, 2 组成, 硅, 信号二极管

BAV199W Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	PANJIT
package instruction	R-PDSO-G3
Reach Compliance Code	compli
ECCN code	EAR99
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.9 V
JESD-30 code	R-PDSO-G3
Maximum non-repetitive peak forward current	2 A
Number of components	2
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	0.2 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum power dissipation	0.2 W
Maximum repetitive peak reverse voltage	100 V
Maximum reverse recovery time	3 µs
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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DATA SHEET

BAS116W/BAW156W/BAV170W/BAV199W

SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES

VOLTAGE

100 Volts

POWER

200mWatts

SOT-323

Unit: inch (mm)

FEATURES

•

Suface mount package ideally suited for automatic insertion.

Very low leakage current. 2pA typical at VR=75V.

Low capacitance.

4pF

max at VR=0V, f=1MHz

In compliance with EU RoHS 2002/95/EC directives

.004(.10)MIN.

.087(2.2)

.078(2.0)

.006(.15)

.002(.05)

.087(2.2)

.070(1.8)

.054(1.35)

.045(1.15)

.056(1.40)

.047(1.20)

MECHANICAL DATA

• Case: SOT-323 plastic

• Terminals: Solderable per MIL-STD-750, Method 2026

• Approx weight: 0.0052 gram

• Marking: BAS116W :PA,BAW156W :P4,BAV170W :P3,BAV199W :PB

.004(.10)MAX.

.016(.40)

.008(.20)

ABSOLUTE RATINGS (each diode)

P A R A M E TE R

R e ve rs e V o l a g e

P e a k R e ve rs e V o l a g e

C o n t n u o u s F o rw a rd C u rre n t

N o n -re p e t t ve P e a k F o rw a rd S u rg e C u rre n t a t t 1 . u s

= 0

S ym b o l

FS M

V al e

100

U ni s

THERMAL CHARACTERISTICS

P A R A M E TE R

P o w e r D i s i a t o n (N o t 1 )

s p i

T h e rm a l R e s i t n c e , J u n c t o n t A m b i n t (N o t 1 )

s a

J u n c t o n Te m p e ra t re

S t ra g e Te m p e ra t re

S ym b o l

TO T

S TG

V al e

200

625

-5 5 t 1 5 0

.044(1.1)

.035(0.9)

U ni s

m W

SINGLE

COMMON ANODE

COMMON CATHODE

SERIES

NOTE:

1. FR-4 Board =

1mm.

BAS116W

BAW156W

BAV170W

BAV199W

REV.0.0-DEC.19.2008

PAGE . 1

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