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BAV16W

Description
Fast switching diodes
CategoryDiscrete semiconductor    diode   
File Size439KB,2 Pages
ManufacturerJCET
Websitehttp://www.cj-elec.com/

Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); ​​QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

 

 

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BAV16W Overview

Fast switching diodes

Features

Product Name: Fast Switching Diode


Product model:BAV16W


product features:


Fast Switching Speed


Surface Mount Package Ideally Suited for Automatic Insertion


For General Purpose Switching Applications


High Conductance



Product parameters:


Pd power dissipation: 400mW


Io rectified current: 150mA


VR reverse working voltage: 75V


VF forward buck: 1.25V


IR reverse current: 1uA


Trr Forward recovery time: 4ns



Package: SOD-123

BAV16W Preview

Download Datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-123 Plastic-Encapsulate Diodes
BAV16W/1N4148W
FAST SWITCHING DIODES
SOD-123
FEATURES
Fast Switching Speed
Surface Mount Package Ideally Suited for Automatic Insertion
For General Purpose Switching Applications
High Conductance
MARKING: T6,T4
Maximum Ratings and Electrical Characteristics, Single Diode @T
a
=25℃
Parameter
Non-Repetitive Peak
Reverse Voltage
Peak Repetitive Peak
Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Average Rectified Output Current
Peak
Forward Surge Current
@t=1.0μs
@t =1.0s
Power Dissipation
Thermal Resistance
from
Junction
to
Ambient
Junction
Temperature
Storage
Temperature
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
I
FSM
Pd
R
θJA
T
j
T
STG
00
312
150
-55~+150
52.5
300
150
2.0
1.0
75
BAV16W
100
+
-
1N4148W
Unit
V
V
V
mA
mA
A
50
357
mW
℃/W
Electrical Ratings @Ta=25℃
Parameter
Symbol
V
F1
Forward voltage
V
F2
V
F3
V
F4
Reverse current
Capacitance between terminals
Reverse
recovery time
I
R1
I
R2
C
T
t
rr
Min
Typ
Max
0.715
0.855
1.0
1.25
1
25
2
4
Unit
V
V
V
V
μA
nA
pF
ns
Conditions
I
F
=1mA
I
F
=10mA
I
F
=50mA
I
F
=150mA
V
R
=75V
V
R
=20V
V
R
=0V,f=1MHz
I
F
=I
R
=10mA
Irr=0.1XI
R
,R
L
=100Ω
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