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BAT54TW

Description
Schottky diode array
CategoryDiscrete semiconductor   
File Size264KB,2 Pages
ManufacturerJCET
Websitehttp://www.cj-elec.com/

Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); ​​QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

 

 

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BAT54TW Overview

Schottky diode array

Features

Product Name: Schottky Diode Array


Product model: BAT54TW


product features:


Low Forward Voltage Drop


Fast Switching


Small Surface Mount Package


PN Junction Guard Ring for Transient and ESD Protection


Available in Lead Free Version



Product parameters:


Pd power dissipation: 200mW


Io rectified current: 200mA


VR reverse working voltage: 30V


VF forward buck: 1V


IR reverse current: 2uA


Trr forward recovery time: 5ns



Package: SOT-363

BAT54TW Preview

Download Datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Diodes
BAT54ADW /BAT54BRW /
BAT54CDW /BAT54SDW /BAT54TW
SCHOTTKY BARRIER DIODE ARRAYS
FEATURES
Low Forward Voltage Drop
Fast Switching
Small Surface Mount Package
PN Junction Guard Ring for Transient and ESD Protection
Available in Lead Free Version
MARKING:
SOT-363
BAT54ADW
MARKING: KL6
BAT54BRW
MARKING: KLB
BAT54CDW
MARKING: KL7
BAT54SDW
MARKING:KL8
BAT54TW
MARKING: KLA
MAXIMUM RATINGS ( T
a
=25
unless otherwise noted )
Symbol
V
RRM
V
RWM
V
R
I
O
I
FRM
I
FSM
P
D
R
ΘJA
T
j
T
stg
Parameter
Repetitive Peak Reverse Voltage
Peak Working Reverse Voltage
DC Blocking Voltage
Forward Continuous Current
Repetitive Peak Forward Current
Non-repetitive Peak Forward Surge Current @t≤1s
Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
200
300
600
200
500
125
-55~+150
mA
mA
mW
℃/W
30
V
Value
Unit
A,Sep,2010
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