BAT54S datasheet, PDF - EEWORLD Datasheet

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BAT54S: Description0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE; Categorysemiconductor Discrete semiconductor; File Size85KB，2 Pages; ManufacturerNanjing International Group Co.,Ltd

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BAT54S Overview

0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE

0.2 A, 30 V, 2 组成, 硅, 信号二极管

BAT54S Parametric

Parameter Name	Attribute value
Number of terminals	3
Number of components	2
Processing package description	SOT-23, 3 PIN
Lead-free	Yes
EU RoHS regulations	Yes
state	DISCONTINUED
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
terminal coating	NOT SPECIFIED
Terminal location	pair
Packaging Materials	Plastic/Epoxy
Craftsmanship	SCHOTTKY
structure	系列 CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materials	silicon
Maximum power consumption limit	0.2000 W
Diode type	Signal diode
Maximum repetitive peak reverse voltage	30 V
Maximum average forward current	0.2000 A

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BAT54 / A / C / S

SCHOTTKY DIODES

BAT54

BAT54A

BAT54C

BAT54S

Marking Code:

L42

Marking Code:

L43

Marking Code:

L44

BAT54

BAT54S

BAT54C

BAT54A

Absolute Maximum Ratings

= 25

Parameter

Repetitive peak reverse voltage

Average rectified forward current

Non-repetitive peak forward surge current

at Pulse width=1.0 second

Power dissipation

Thermal resistance junction to ambient air

Junction temperature

Storage temperature range

Symbol

RRM

F(AV)

FSM

tot

θJA

Limits

200

600

290

430

-55 to +150

Unit

C/W

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Characteristics at T

= 25

Parameter

Forward voltage

at I

= 0.1mA

at I

= 1mA

at I

= 10mA

at I

= 30mA

at I

= 100mA

Reverse current

at V

= 25V

Breakdown voltage

at I

=10μA

Total capacitance

at V

= 1V, f = 1MHz

Reverse recovery time

at I

= 10mA, I

= 1mA,

= 100Ω

Symbol

tot

Min.

Max.

240

320

400

500

1000

Unit

μA

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