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BAS20WS

Description
0.2 A, 150 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size323KB,1 Pages
ManufacturerNanjing International Group Co.,Ltd
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0.2 A, 150 V, SILICON, SIGNAL DIODE

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DONGGUAN NANJING ELECTRONICS LTD.,
SOD-323 Plastic-Encapsulate Diodes
BAS19WS/BAS20WS/BAS21WS
FAST SWITCHING DIODE
FEATURES
Fast Switching Speed
Surface Mount Package Ideally Suited for Automatic Insertion
For General Purpose Switching Applications
MARKING: BAS19WS: A8
BAS20WS: T2
BAS21WS: T3
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Parameter
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Average Rectified Output Current
Peak Forward Surge Current @t=1.0ms
@ t=1.0s
Repetitive Peak Forward Current
Power Dissipation
Thermal Resistance Junction to
Ambient
Storage Temperature
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
I
FSM
I
FRM
Pd
R
θJA
T
STG
71
106
400
200
2.5
0.5
625
250
500
-55~+150
141
V
mA
mA
A
mA
mW
℃/W
100
150
250
V
BAV19WS
120
BAV20WS
200
BAV21WS
250
Unit
V
SOD-323
Electrical Ratings @Ta=25℃
Parameter
Symbol
V
F1
V
F2
BAS19WS
BAS20WS
BAS21WS
Capacitance between terminals
Reverse recovery time
C
T
t
rr
I
R
Min
Typ
Max
1.0
1.25
0.1
0.1
0.1
5
50
pF
ns
μA
V
Unit
Conditions
I
F
=0.1A
I
F
=0.2A
V
R
=100V
V
R
=150V
V
R
=200V
V
R
=0V,f=1MHz
I
F
=I
R
=30mA
Irr=0.1XI
R
,R
L
=100Ω
Forward voltage
Reverse current
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