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BAS16-AU

Description
Product Status:Active, AEC-Q101 Qualified(V):Y, VRRM Max.(mW):100, PTO(ns):350, trr Max.(A):6, IFSM(ms):2, @tp(V):0.001, VF Max.(mA):0.855, @IF(µA):10
CategoryDiscrete semiconductor    diode   
File Size298KB,5 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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BAS16-AU Overview

Product Status:Active, AEC-Q101 Qualified(V):Y, VRRM Max.(mW):100, PTO(ns):350, trr Max.(A):6, IFSM(ms):2, @tp(V):0.001, VF Max.(mA):0.855, @IF(µA):10

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BAS16-AU~BAS21-AU
SURFACE MOUNT SWITCHING DIODES
VOLTAGE
FEATURES
• Fast switching speed.
• Surface mount package Ideally Suited for Automatic insertion
• Electrically Identical to Standard JEDEC
• High Conductance
Acqire quality system certificate : TS16949
AEC-Q101 qualified
Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
0.004(0.10)
0.044(1.10)
0.035(0.90)
0.020(0.50)
0.013(0.35)
0.056(1.40)
0.047(1.20)
0.120(3.04)
0.110(2.80)
100-250 Volts
POWER
350mWatts
SOT-23
Unit
inch(mm)
0.079(2.00)
0.070(1.80)
0.008(0.20)
0.003(0.08)
MECHANICAL DATA
Case: SOT-23, Plastic
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0003 ounces, 0.0084 grams
0.000(0.00)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
O
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.For capacitive load, derate current by 20%.
PARAMETER
Marking Code
Reverse Voltage
Peak Reverse Voltage
Rectified Current (Average), Half Wave Rectification
with Resistive Load and f >=50 Hz
Peak Forward Surge Current, tp=1.0
µ
s single half
sine-wave superimposed on rated load
(JEDEC method)
Power Dissipation Derate Above 25
O
C
Maximum Forward Voltage
Maximum DC Reverse Current at Rated DC Blocking
Voltage T
J
= 25
O
C
Typical Junction Capacitance( Notes1)
Maximum Reverse Recovery (Notes2)
Typical Thermal Resistance
Storage Temperature Range
SYMBOL
B A S 16
A6
BAS1 9
A8
100
120
200
2.5
350
BAS20
A 80
150
200
200
2.5
350
1.0@100mA
B AS21
A 82
200
250
200
2.5
350
UNITS
V
R
V
RM
I
O
I
FSM
P
TOT
V
F
I
R
CJ
T
RR
RΘJA
T
J
75
100
250
2
350
0.855@10mA
1
2
6
V
V
mA
A
mW
V
1
1.5
50
357
-55 TO +125
1
1.5
50
1
1.5
50
O
uA
pF
ns
C/W
O
C
SINGLE
NOTE:
1. CJ at V
R
=0, f=1MHZ
2.From I
F
=10mA to I
R
=1mA, V
R
=6Volts, R
L
=100Ω
REV.0.1-FEB.4.2009
PAGE . 1
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