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BAP64-05W

Description
PIN diode
CategoryDiscrete semiconductor   
File Size2MB,1 Pages
ManufacturerJCET
Websitehttp://www.cj-elec.com/

Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); ​​QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

 

 

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BAP64-05W Overview

PIN diode

Features

Product Name: PIN diode


Product model: BAP64-05W


product features:


High voltage, current controlled


RF resistor for RF attenuators and switches


Low diode capacitance


Low diode forward resistance


Low series inductance


For applications up to 3 GHz


RF attenuators and switches



Product parameters:


Pd dissipated power: 250mW


IF forward current: 100mA


VR reverse working voltage: 175V


IR reverse current: 10uA


Cd@1MHz :0V=0.52+pF 1V=0.37+pF


rd :1.35Ω



Package: SOT-323

BAP64-05W Preview

Download Datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Diodes
BAP64-05W
FEATURES
High voltage, current controlled
RF resistor for RF attenuators and switches
Low diode capacitance
Low diode forward resistance
Low series inductance
For applications up to 3 GHz
RF attenuators and switches
PIN DIODE
SOT-323
Marking:
5W
Maximum Ratings @Ta=25℃
Parameter
Continuous Reverse Voltage
Continuous Forward Current
Power Dissipation
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
V
R
I
F
P
D
R
θJA
T
j
T
STG
Limit
175
100
200
625
150
-55~+150
Unit
V
mA
mW
℃/W
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Reverse voltage leakage current
Forward voltage
Symbol
I
R
V
F
Test
V
R
=175V
V
R
=20V
I
F
=50mA
V
R
=0, f=1MHz
Diode capacitance
C
d
V
R
=1V, f=1MHz
V
R
=20V, f=1MHz
I
F
=0.5mA, f=100MHz;note1
Diode forward resistance
r
D
I
F
=1mA, f=100MHz
;note1
I
F
=10mA, f=100MHz;note1
I
F
=100mA, f=100MHz;note1
0.52
0.37
0.23
20
10
2
0.7
1.55
0.35
40
20
3.8
1.35
μs
pF
conditions
Min
Typ
Max
10
1
1.1
Unit
µA
V
when switched from
Charge carrier life time
τ
L
I
F
= 10 mA to I
R
= 6 mA; R
L
=
100
Ω;
measured at I
R
=3mA
Series inductance
L
S
I
F
=100mA, f=100MHz
1.4
nH
Note 1. Guaranteed on AQL basis: inspection level S4,AQL 1.0.
A,Apr,2011
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