BAP64-03
Silicon PIN diode
FEATURES
•
High voltage, current controlled
•
RF resistor for RF attenuators and switches
•
Low diode capacitance
•
Low diode forward resistance
•
Low series inductance
•
For applications up to 3 GHz.
APPLICATIONS
•
RF attenuators and switches.
DESCRIPTION
Planar PIN diode in a SOD323 very small plastic SMD
package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
R
I
F
P
tot
T
stg
T
j
PARAMETER
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
T
j
= 25
°C
unless otherwise specified.
CONDITIONS
I
F
= 50 mA
V
R
= 175 V
V
R
= 20 V
V
R
= 0; f = 1 MHz
C
d
diode capacitance
V
R
= 1 V; f = 1 MHz
V
R
= 20 V; f = 1 MHz
I
F
= 0.5 mA; f = 100 MHz; note 1
r
D
diode forward resistance
I
F
= 1 mA; f = 100 MHz; note 1
I
F
= 10 mA; f = 100 MHz; note 1
I
F
= 100 mA; f = 100 MHz; note 1
τ
L
charge carrier life time
MIN.
−
−
−
−
−
−
−
−
−
−
TYP.
0.95
−
−
0.48
0.35
0.23
20
10
2
0.7
1.55
MAX.
1.1
10
1
−
---
0.35
40
20
3.8
1.35
−
UNIT
V
µA
µA
pF
pF
pF
Ω
Ω
Ω
Ω
µs
T
s
= 90
°C
CONDITIONS
−
−
−
−65
−65
MIN.
MAX.
175
100
500
+150
+150
UNIT
V
mA
mW
°C
°C
Marking code:
A3
handbook, halfpage
1
2
1 cathode
2 anode
Fig.1 Simplified outline (SOD323) and symbol.
ELECTRICAL CHARACTERISTICS
SYMBOL
V
F
I
R
PARAMETER
forward voltage
reverse leakage current
when switched from I
F
= 10 mA to
−
I
R
= 6 mA; R
L
= 100
Ω;
measured at I
R
= 3 mA
−
L
S
series inductance
1.68
−
nH
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction to soldering point
VALUE
120
UNIT
K/W
REV.08
1 of 3
BAP64-03
GRAPHICAL DATA
100
r
D
(Ω)
500
C
D
(fF)
400
10
300
200
1
100
0.1
0.1
1
10
100
I
F
(mA)
0
0
4
8
12
16
V
R
(V)
f = 1 MHz; T
j
= 25
°
C.
20
f = 100 MHz; T
j
= 25
°
C.
Fig.2
Forward resistance as a function of
forward current; typical values.
Fig.3
Diode capacitance as a function of reverse
voltage; typical values.
0
|S
21
|
(dB)
-1
2
(1)
(3)
(2)
0
|S
21
|
2
(dB)
-5
-10
-2
(4)
-15
-3
-20
-4
-25
-5
0.5
1
1.5
2
2.5
3
f (GHz)
-30
0.5
1
1.5
2
2.5
3
f (GHz)
(1) I
F
= 100 mA.; (2) I
F
= 10 mA.; (3) I
F
= 1 mA.; (4) I
F
= 0.5 mA.
Diode inserted in series with a 50
Ω
stripline circuit and
biased via the analyzer Tee network.
T
amb
= 25
°
C.
Diode zero biased and inserted in series with a 50
Ω
stripline circuit.
T
amb
= 25
°
C.
Fig.4
Insertion loss (|S
21
|
2
) of the diode as a
function of frequency; typical values.
Fig.5
Isolation (|S
21
|
2
) of the diode as a function
of frequency; typical values.
REV.08
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BAP64-03
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD323
---
A
A1
c
Lp
HE
v
M
A
v
---
D
A
1
E
bp
2
(1)
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.0
---
A1
0.10
−
0.00
bp
0.35
0.25
c
0.15
0.08
D
1.8
1.6
E
1.40
1.20
HE
2.7
2.5
Lp
0.40
0.25
v
0.90
0.80
Note
1. The marking bar indicates the cathode.
REV.08
3 of 3
Wireless Connectivity
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