B5819LW datasheet, PDF - EEWORLD Datasheet

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B5819LW: DescriptionDC reverse withstand voltage (Vr): 40V Average rectified current (Io): 500mA Forward voltage drop (Vf): 600mV @ 1A; CategoryDiscrete semiconductor Schottky diode; File Size289KB，2 Pages; ManufacturerShenzhen Heketai Electronics Co., Ltd.; Websitehttp://www.heketai.com; Founded in 1992, Hekotech is a high-tech innovative enterprise specializing in the R&D, design, packaging, testing, production and sales of semiconductor analog chips and discrete devices. The product line includes lithium battery protection IC, charging management IC, LDO, MOSFET, diode, TVS, bridge stack, triode and other discrete devices and integrated circuits, providing customers with application solutions and on-site technical support services. The company has ISO9001, ISO14001, IATF16949 quality system certification. The products include semiconductors and passive components, which are widely used in power supply, lighting, medical electronics, small appliances, communications, security, instruments, industrial control, automotive electronics and other fields.

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B5819LW Overview

DC reverse withstand voltage (Vr): 40V Average rectified current (Io): 500mA Forward voltage drop (Vf): 600mV @ 1A

B5819LW Parametric

Parameter Name	Attribute value
DC reverse withstand voltage (Vr)	40V
Average rectified current (Io)	500mA
Forward voltage drop (Vf)	600mV @ 1A

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Plastic-Encapsulate Diodes

SCHOTTKY BARRIER DIODE

B5819W

FEATURES

For use in low voltage, high frequency inverters

Free wheeling, and polarity protection applications.

SOD-123

MARKING:

MAXIMUM RATINGS (TA=25

Parameter

Non-Repetitive Peak reverse voltage

Peak Repetitive Peak reverse voltage

Working Peak Reverse Voltage

DC Blocking

RMS Reverse Voltage

Average Rectified Output Current

Repetitive Peak Forward Current

Power Dissipation

unless otherwise noted)

Symbol

Value

0.5

1.5

500

250

-65~+150

Units

RRM

RWM

R(RMS)

FRM

θJA

STG

Thermal Resistance Junction to Ambient

Storage temperature

ELECTRICAL CHARACTERISTICS (Tamb=25

Parameter

Reverse breakdown voltage

Reverse voltage leakage current

Forward voltage

unless otherwise specified)

Test conditions

= 1mA

= 40V

=1A

=3A

Symbol

(BR)

MIN

MAX

UNIT

0.6

0.9

120

Diode capacitance

=4V, f=1MHz

GUANGDONG HOTTECH

INDUSTRIAL CO., LTD

Page:P2-P1

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