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B5818W 环保

Description
DC reverse withstand voltage (Vr): 30V Average rectified current (Io): 1A Forward voltage drop (Vf): 550mV @ 1A 30V, 1A, VF=0.55V@1A
CategoryDiscrete semiconductor    Schottky diode   
File Size351KB,1 Pages
ManufacturerJCET
Websitehttp://www.cj-elec.com/

Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); ​​QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

 

 

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B5818W 环保 Overview

DC reverse withstand voltage (Vr): 30V Average rectified current (Io): 1A Forward voltage drop (Vf): 550mV @ 1A 30V, 1A, VF=0.55V@1A

B5818W 环保 Parametric

Parameter NameAttribute value
DC reverse withstand voltage (Vr)30V
Average rectified current (Io)1A
Forward voltage drop (Vf)550mV @ 1A

B5818W 环保 Preview

Download Datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-123 Plastic-Encapsulate Diodes
SOD-123
B5817W-5819W
FEATURES
SCHOTTKY BARRIER DIODE
For use in low voltage, high frequency inverters
Free wheeling, and polarity protection applications.
MARKING:
B5817W: SJ
B5818W:SK
B5819W: SL
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Parameter
Non-Repetitive Peak
Reverse Voltage
Peak
Repetitive
Peak
Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
Peak
Forward Surge Current
@t=8.3ms
Repetitive Peak Forward Current
Power Dissipation
Thermal Resistance Junction to
Ambient
Junction temperature
Storage
Temperature
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
I
FRM
Pd
R
θJA
T
J
T
STG
B5817W
20
20
14
B5818W
30
30
21
1
9
1.5
500
200
125
-55~+150
B5819W
40
40
28
Unit
V
V
V
A
A
A
mW
℃/W
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Symbol
V
(BR)
Test
I
R
= 1mA
conditions
B5817W
B5818W
B5819W
B5817W
B5818W
B5819W
I
F
=1A
I
F
=3A
I
F
=1A
I
F
=3A
I
F
=1A
I
F
=3A
Min
20
30
40
Max
Unit
V
Reverse voltage leakage current
I
R
V
R
=20V
V
R
=30V
V
R
=40V
B5817W
B5818W
B5819W
1
0.45
0.75
0.55
0.875
0.6
0.9
120
mA
V
V
V
Forward voltage
V
F
Diode capacitance
C
D
V
R
=4V, f=1MHz
pF
B,Jul,2012
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