B1S datasheet, PDF - EEWORLD Datasheet

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B1S: DescriptionBridge bridge; CategoryDiscrete semiconductor diode; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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B1S Overview

Bridge bridge

桥式整流二极管

Features

Product name: Bridge

Product model: B1S

Product parameters:

Peak Repetitive Reverse Voltage: VRRM: 100V

Max. Average Rectified Current: IO: 0.5/0.8*A

Max. Peak Forward Surge Current: IFSM: 30A

Forward Voltage Drop: VF@IF: 1V@0.5A

Max. Reverse Current: IR@VR: 5μA@100V

Package: MDI

B1S Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	PANJIT
package instruction	R-PDSO-G4
Contacts	4
Reach Compliance Code	_compli
ECCN code	EAR99
Other features	UL RECOGNIZED
Minimum breakdown voltage	100 V
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
JESD-30 code	R-PDSO-G4
JESD-609 code	e3
Maximum non-repetitive peak forward current	30 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	0.8 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum power dissipation	1.4 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	100 V
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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B1S~B10S

MINI SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER

VOLTAGE

100 to 1000Volts

CURRENT

0.8 Amperes

Recongnized File # E111753

FEATURES

• Plastic material used carries Underwriters Laboratory recognition 94V-O

0.031(0.8)

0.019(0.5)

0.275(7.0)MAX

0.165(4.2)

0.150(3.8)

0.106(2.7)

0.090(2.3)

0.106(2.7)

0.090(2.3)

0.193(4.9)

0.177(4.5)

0.067(1.7)

0.057(1.3)

C 0.02(0.5)

0.051(1.3)

0.035(0.9)

0.043(1.1)

0.027(0.7)

• Low leakage

• Surge overload rating-- 30 amperes peak

• Ideal for printed circuit board

• Exceeds environmental standards of MIL-S-19500

• In compliance with EU RoHS 2002/95/EC directives

• Case: Reliable low cost construction utilizing molded plastic technique

results in

• inexpensive product

• Terminals: Lead solderable per MIL-STD-750, Method 2026

• Polarity: Polarity symbols molded or marking on body

• Mounting Position: Any

• Weight: 0.0044 ounce, 0.1268 gram

0.014(0.35)

0.006(0.15)

0.008(0.20)

MECHANICAL DATA

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, Resistive or inductive load.

For capacitive load, derate current by 20%

PA R A ME TE R

Ma xi m um Re c ur r e nt P e a k R e ve r s e Vo lt a g e

Ma xi m um RM S B r i d g e Inp ut Vo lt a g e

Ma xi m um D C B lo c k i ng Vo lt a g e

Ma xi m um A ve r a g e F o r wa r d

C ur r e nt T

= 5 5

= 25

S YM B O L

R RM

RMS

F (A V )

F S M

( No te 2 )

θJ

, T

S TG

B1S

100

B2S

200

140

200

B4S

400

280

400

0 .5

0 .8

1 .4

B6S

600

420

600

B8S

800

560

800

B 10S

1000

700

1000

UNITS

P e a k F o r wa r d S ur g e C ur r e nt : 8 . 3 m s s i ng le ha lf s i ne - wa ve

s up e r i mp o s e d o n r a t e d lo a d ( J E D E C m e tho d )

P o we r D i s s i p a t i o n a t T

= 2 5

t Ra t i ng f o r f us i ng ( t <8 . 3 5 m s )

Ma xi m um F o r wa r d Vo lt a g e D r o p p e r B r i d g e E le m e nt a t 0 . 5 A

Ma xi m um D C Re ve r s e C ur r e nt a t Ra t e d D C

B lo c k i ng Vo lta g e

Typ i c a l J unc t i o n c a p a c i t a nc e ( No t e 1 )

Typ i c a l t he r ma l r e s i s t a nc e

= 2 5

= 1 2 5

3 .7 3 5

1 .0

5 .0

500

-5 5 to +1 5 0

C / W

Op e r a ti ng J unc t i o n a nd S t o r a g e Te m p e r a tur e Ra ng e

NOTES:

1. Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts.

2. Thermal resistance from junction to ambient mounted mounted on 5cmX6cm P.C.B. with minimum copper pads.

March 31,2011-REV.02

PAGE . 1

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