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ARS35A

Description
35 A, 50 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size139KB,2 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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35 A, 50 V, SILICON, RECTIFIER DIODE

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ARS/AR35A SERIES
硅整流器
Silicon Rectifier
■特征
Features
I
o
V
RRM
■外½尺寸和印记
ARS
.225(5.7)
.215(5.5)
Outline Dimensions and Mark
AR
35A
50V~1000V
½用环氧胶进行保护
Plastic material used carries underwriters
耐正向浪涌电流½力高
High surge forward current capability
½一般单相整流用
General purpose 1 phase
rectifier applications
.225(5.7)
.215(5.5)
■用途
Applications
.347(8.9)
.327(8.3)
.410(10.4)
.380(9.7)
.250(6.4)
.235(6.0)
.185(4.7)
.165(4.2)
.250(6.4)
.235(6.0)
.185(4.7)
.165(4.2)
Dimensions in inches and (millimeters)
■极限值(绝对最大额定值)
Limiting Values(Absolute Maximum Rating)
参数名称
Item
反向重复峰值电压
Repetitive Peak Reverse Voltage
平均整流输出电流
Average Rectified Output
Current
正向(不重复)浪涌电流
Surge(Non-repetitive)Forward
Current
正向浪涌电流的平方对电流浪
涌持续
时间的积分值
Current Squared Time
存储温度
Storage Temperature
结温
Junction Temperature
符号 单½
Symbol Unit
V
RRM
I
O
I
FSM
V
A
A
条件
Conditions
005 01
50
100
ARS/AR35A
02 04 06
200
400 600
35
08
10
800 1000
60H
Z
正弦波,电阻负½½,T
c
=150℃
60H
Z
sine wave, R- load, T
c
=150℃
60H
Z
正弦波,一个周期,T
a
=25℃
60H
Z
sine wave, 1 cycle, T
a
=25℃
1ms≤t<8.3ms T
j
=25
,
单个二极
1ms≤t
8.3ms T
j
=25
,Rating of
per diode
500
2
It
A
2
s
1042
T
stg
T
j
-55 ~+175
-55 ~+175
■电特性 (T
a=25℃
除非另有规定)
Electrical Characteristics
(T
a
=25℃ Unless otherwise specified)
参数名称
Item
符号
单½
Symbol Unit
V
FM
I
RRM1
I
RRM2
R
θ
J-C
V
μA
/W
测试条件
Test Condition
I
FM
=35A,脉冲测试,单个二极管的额定值
I
FM
=35A, Pulse measurement, Rating of per diode
T
a
=25℃
V
RM
=V
RRM
T
a
=125℃
结和外壳之间
Between junction and case
最大值
Max
1.1
5
500
0.7
正向峰值电压
Peak Forward Voltage
反向峰值电流
Peak Reverse Current
热阻
Thermal Resistance
Document Number 0087
Rev. 1.0, 22-Sep-11
扬州扬杰电子科技股½有限公司
Yangzhou Yangjie Electronic Technology Co., Ltd. 
www.21yangjie.com
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