AO3404
30V N-Channel Enhancement Mode MOSFET
VDS= 30V
RDS(ON), Vgs@10V, Ids@5.8A < 38m
RDS(ON), Vgs@4.5V, Ids@5.0A < 52m
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
D
G
S
SOT-23(PACKAGE)
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0°
10°
ABSOULTE MAXIMUM RATINGS
(Ta = 25
℃
Unless otherwise noted )
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ=150
℃
) T
A
=25℃
T
A
=70
℃
Pulsed Drain Current
Power Dissipation
T
A
=25℃
T
A
=70
℃
Maximum Body-Diode Continuous Current
Operation Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Symbol
V
DSS
V
GSS
I
D
I
DM
P
D
Typical
30
±
20
5.8
4.9
30
1.4
1.0
2.5
-55
-55/150
150
Unit
V
V
A
A
W
A
C
C
W
T
J
T
STG
R
θ
JA
- 1-
2013-5-30
AO3404
ELECTRICAL CHARACTERISTICS
( Ta = 25
℃
Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-source On-Resistance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
Turn-Off Time
Qg
Qgs
Qgd
V
DS
=15V,V
GS
=4.5V
I
D
≡
5.8A
9.7
1.6
3.1
3.3
4.8
26.3
4.1
12
nC
5
7
40
6
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
V
SD
V
GS
=0V,I
D
=250uA
V
DS
=V
GS
,I
D
=250uA
V
DS
=0V,V
GS
=
±
20V
V
DS
=30V,V
GS
=0V
V
DS
≦
5V,V
GS
=4.5V
V
GS
=10V,I
D
=5.8A
V
GS
=4.5V,I
D
=5.0A
I
S
=1.0A,V
GS
=0V
10
33
37
0.7
30
1.1
3.0
V
V
uA
A
38
m
Ω
52
1.1 V
±
100 nA
1
t
d(on)
t
r
t
d(off)
t
f
V
GS
=10V, V
DS
=10V,
R
L
=2.7
Ω
,V
GEN
=4.5V
nS
- 2-
2013-5-30