AME
AME8861
n
General Description
The AME8861 family of positive, linear regulators fea-
ture low quiescent current (30µA typ.) with low dropout
voltage, making them ideal for battery applications. The
space-saving SOT-25 package is attractive for "Pocket"
and "Hand Held" applications.
These rugged devices have both Thermal Shutdown,
and Current Fold-back to prevent device failure under the
"Worst" of operating conditions.
600mA CMOS LDO
n
Functional Block Diagram
IN
OUT
Overcurrent
Shutdown
Thermal
Shutdown
EN
BYP
AMP
www.microchip.com
In applications requiring a low noise, regulated supply,
place a 1000 pF capacitor between Bypass and ground.
The AME8861 is stable with an output capacitance of
2.2µF or greater.
R1
n
Features
l
Very Low Dropout Voltage
l
600mA Output
l
Accurate to within 1.5%
l
30µA Quiescent Current
l
Over-Temperature Shutdown
l
Current Limiting
l
Short Circuit Current Fold-back
l
Noise Reduction Bypass Capacitor
l
Power-Saving Shutdown Mode
l
Space-Saving SOT- 25 Package
l
Factory Pre-set Output Voltages
l
Low Temperature Coefficient
l
All AME's Lead Free Products Meet RoHS
Standards
5V
INPUT
V
ref
=1.215V
R2
GND
n
Typical Application
IN
OUT
OUTPUT
AME8861
BYP
GND
EN
C1
1µF
C2
1000pF
C3
2.2µF
n
Applications
l
Instrumentation
l
Portable Electronics
l
Wireless Devices
l
Cordless Phones
l
PC Peripherals
l
Battery Powered Widgets
l
Electronic Scales
Rev.E.05
1
AME
AME8861
n
Ordering Information (contd.)
Part Number
AME8861AEEV180Y
AME8861AEEV180Z
AME8861AEEV250
AME8861AEEV250L
AME8861AEEV250Y
AME8861AEEV250Z
AME8861AEEV300
AME8861AEEV300L
AME8861AEEV300Y
AME8861AEEV300Z
AME8861AEEV330
AME8861AEEV330L
AME8861AEEV330Y
AME8861AEEV330Z
600mA CMOS LDO
Marking*
BFNww
BFNww
AXCww
Output Voltage
1.8V
1.8V
2.5V
Package
TSOT-25
SOT-25
SOT-25
TSOT-25
TSOT-25
SOT-25
SOT-25
TSOT-25
TSOT-25
SOT-25
SOT-25
TSOT-25
TSOT-25
SOT-25
Operating Ambient
Temperature Range
- 40
o
C to + 85
o
C
- 40
o
C to + 85
o
C
- 40
o
C to + 85
o
C
- 40
o
C to + 85
o
C
- 40
o
C to + 85
o
C
- 40
o
C to + 85
o
C
- 40
o
C to + 85
o
C
- 40
o
C to + 85
o
C
- 40
o
C to + 85
o
C
- 40
o
C to + 85
o
C
- 40
o
C to + 85
o
C
- 40
o
C to + 85
o
C
- 40
o
C to + 85
o
C
- 40
o
C to + 85
o
C
AXCww
www.microchip.com
2.5V
AXCww
AXCww
AWGww
AWGww
AWGww
AWGww
AXBww
AXBww
AXBww
AXBww
2.5V
2.5V
3.0V
3.0V
3.0V
3.0V
3.3V
3.3V
3.3V
3.3V
Note: ww represents the date code and pls refer to date Code Rule before Package Dimension.
* A line on top of the first character represents lead free plating such as BFNww.
Please consult AME sales office or authorized Rep./Distributor for the availability of output voltage and package type.
Rev.E.05
3
AME
AME8861
n
Absolute Maximum Ratings
Parameter
Input Voltage
Output Current
Input, Output Voltage
ESD Classification
600mA CMOS LDO
Maximum
8
P
D
/ (V
IN
- V
O
)
GND - 0.3 to V
IN
+ 0.3
B*
Unit
V
A
V
Caution: Stress above the listed absolute maximum rating may cause permanent damage to the device.
* HBM B:2000V~3999V
n
Recommended Operating Conditions
Parameter
Ambient Temperature Range
Junction Temperature Range
Storage Temperature Range
Symbol
T
A
T
J
T
STG
Rating
- 40 to +85
- 40 to +125
- 65 to +150
Unit
o
C
C
C
o
o
n
Thermal Information
Parameter
Thermal Resistance*
( Junction to Case)
Thermal Resistance
( Junction to Ambient)
Internal Power Dissipation
Maximum Junction Temperature
Solder Iron (10 Sec)**
* Measure
θ
JC
on center of molding compound if IC has no tab.
** MIL-STD-202G 210F
SOT-25
Conductive Epoxy
Package
Die Attach
Symbol
θ
JC
θ
JA
Maximum
81
Unit
o
C/W
260
P
D
400
150
350
mW
o
o
C
C
4
Rev.E.05
AME
AME8861
n
Electrical Specifications
T
A
= 25
O
C unless otherwise noted.
Parameter
Input Voltage
Output Voltage Accuracy
Symbol
V
IN
V
O
I
O
=1mA
1.3V<V
O(NOM)
<=1.4V
Dropout Voltage
V
DROPOUT
I
O
=600mA
1.4V<V
O(NOM)
<=2.0V
Test Condition
Min
Note 1
-1.5
Typ
Max
7
1.5
1900
See 1400
chart 800
600
600
600
800
300
30
35
-0.2
-0.15
-0.1
-0.4
0.02
0.2
0.2
150
30
30
I
O
=100mA
Power Supply Rejection
PSRR
C
O
=2.2µF ceramic
C
BYP
=0.01µF
Output Voltage Noise
eN
f=10Hz to 100kHz
I
O
=10mA,
C
BYP
=0.01µF
f=1kHz
f=10kHz
f=100kHz
Co=2.2µF
75
55
30
30
µVrms
dB
0.2
0.15
0.1
0.4
1
%
o
o
600mA CMOS LDO
Units
V
%
V
O
=V
O(NOM)
-2.0% 2.0V<V
O(NOM)
<=2.8V
mV
www.microchip.com
2.8V<V
O(NOM)
Output Current
Current Limit
Short Circuit Current
Quiescent Current
Ground Pin Current
I
O
I
LIM
I
SC
I
Q
I
GND
V
O
>1.2V
V
O
>1.2V
V
O
<0.8V
I
O
=0mA
I
O
=1mA to 600mA
1.3V<=V
O
<=1.4V
Line Regulation
REG
LINE
I
O
=1mA
V
IN
=V
O
+1 to V
O
+2
1.4V<V
O
<=2.0V
2.0V<V
O
< 4.0V
V
O
>=4.0V
Load Regulation
Over Temperature Shutdown
Over Temperature Hysterisis
V
O
Temperature Coefficient
REG
LOAD
OTS
OTH
TC
I
O
=1mA to 600mA
mA
mA
600
50
mA
µA
µA
%
C
C
ppm/
o
C
Rev.E.05
5
Power technology
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