AF5N60S datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> MOS (field effect tube)> AF5N60S

AF5N60S: DescriptionDrain-source voltage (Vdss): 600V Continuous drain current (Id) (at 25°C): 5A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 2.2Ω @ 2.5A, 10V Maximum power dissipation ( Ta=25°C): 36W Type: N-channel; CategoryDiscrete semiconductor MOS (field effect tube); File Size2MB，8 Pages; ManufacturerANBON SEMICONDUCTOR; Websitehttp://www.formosagr.com/; Anbon (AS) is a world-leading manufacturer of the chip and package of SiC Diodes, Si Diodes, and MOS in semiconductor industry. Their core technology has the advantages of upstream and downstream integration. AS focuses on the development and production of power semiconductor devices such as MOS, TVS, Schottky diodes, and more. AS products are divided into automotive, industrial, and commercial.

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AF5N60S Overview

Drain-source voltage (Vdss): 600V Continuous drain current (Id) (at 25°C): 5A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 2.2Ω @ 2.5A, 10V Maximum power dissipation ( Ta=25°C): 36W Type: N-channel

AF5N60S Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	600V
Continuous drain current (Id) at 25°C	5A
Gate-source threshold voltage	4V @ 250uA
Drain-source on-resistance	2.2Ω @ 2.5A,10V
Maximum power dissipation (Ta=25°C)	36W
type	N channel

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