AF12N65S datasheet, PDF - EEWORLD Datasheet

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AF12N65S: DescriptionDrain-source voltage (Vdss): 650V Continuous drain current (Id) (at 25°C): 12A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 850mΩ @ 6A, 10V Maximum power dissipation (Ta=25°C): 51W (Tc) Type: N channel N channel, 650V, 12A, 0.85Ω@10V; CategoryDiscrete semiconductor MOS (field effect tube); File Size2MB，8 Pages; ManufacturerANBON SEMICONDUCTOR; Websitehttp://www.formosagr.com/; Anbon (AS) is a world-leading manufacturer of the chip and package of SiC Diodes, Si Diodes, and MOS in semiconductor industry. Their core technology has the advantages of upstream and downstream integration. AS focuses on the development and production of power semiconductor devices such as MOS, TVS, Schottky diodes, and more. AS products are divided into automotive, industrial, and commercial.

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AF12N65S Overview

Drain-source voltage (Vdss): 650V Continuous drain current (Id) (at 25°C): 12A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 850mΩ @ 6A, 10V Maximum power dissipation (Ta=25°C): 51W (Tc) Type: N channel N channel, 650V, 12A, 0.85Ω@10V

AF12N65S Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	650V
Continuous drain current (Id) at 25°C	12A(Tc)
Gate-source threshold voltage	4V @ 250uA
Drain-source on-resistance	850mΩ @ 6A,10V
Maximum power dissipation (Ta=25°C)	51W(Tc)
type	N channel

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